Nucleation of diamond films on surfaces using carbon clusters

R. J. Meilunas, Robert P. H. Chang, Shengzhong Liu, Manfred M. Kappes

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

A unique method for nucleating diamond films on surfaces using C clusters is described. The process substitutes the need for diamond polish pretreatment of substrates prior to diamond film growth, as currently practiced in low-pressure (60 and C70 as nucleating layers on single-crystal Si surfaces is presented. It is shown that a thin layer (approximately 1000 Å) of pure carbon C70 is sufficient for the nucleation and growth of fine grain polycrystalline diamond films. The enhancement of nucleation by the C70 layer is nearly ten orders of magnitude over an untreated Si surface. It also follows that C clusters can be used as a one-step lithographic template for growing diamond on selected regions of the substrate. In addition, insight into the mechanism for diamond nucleation from C clusters is given.

Original languageEnglish
Pages (from-to)3461-3463
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number26
DOIs
Publication statusPublished - 1991

Fingerprint

diamond films
diamonds
nucleation
carbon
crystal surfaces
pretreatment
templates
low pressure
substitutes
augmentation
single crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nucleation of diamond films on surfaces using carbon clusters. / Meilunas, R. J.; Chang, Robert P. H.; Liu, Shengzhong; Kappes, Manfred M.

In: Applied Physics Letters, Vol. 59, No. 26, 1991, p. 3461-3463.

Research output: Contribution to journalArticle

Meilunas, R. J. ; Chang, Robert P. H. ; Liu, Shengzhong ; Kappes, Manfred M. / Nucleation of diamond films on surfaces using carbon clusters. In: Applied Physics Letters. 1991 ; Vol. 59, No. 26. pp. 3461-3463.
@article{34a515f0361a460ab3a39721b51adb81,
title = "Nucleation of diamond films on surfaces using carbon clusters",
abstract = "A unique method for nucleating diamond films on surfaces using C clusters is described. The process substitutes the need for diamond polish pretreatment of substrates prior to diamond film growth, as currently practiced in low-pressure (60 and C70 as nucleating layers on single-crystal Si surfaces is presented. It is shown that a thin layer (approximately 1000 {\AA}) of pure carbon C70 is sufficient for the nucleation and growth of fine grain polycrystalline diamond films. The enhancement of nucleation by the C70 layer is nearly ten orders of magnitude over an untreated Si surface. It also follows that C clusters can be used as a one-step lithographic template for growing diamond on selected regions of the substrate. In addition, insight into the mechanism for diamond nucleation from C clusters is given.",
author = "Meilunas, {R. J.} and Chang, {Robert P. H.} and Shengzhong Liu and Kappes, {Manfred M.}",
year = "1991",
doi = "10.1063/1.105678",
language = "English",
volume = "59",
pages = "3461--3463",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Nucleation of diamond films on surfaces using carbon clusters

AU - Meilunas, R. J.

AU - Chang, Robert P. H.

AU - Liu, Shengzhong

AU - Kappes, Manfred M.

PY - 1991

Y1 - 1991

N2 - A unique method for nucleating diamond films on surfaces using C clusters is described. The process substitutes the need for diamond polish pretreatment of substrates prior to diamond film growth, as currently practiced in low-pressure (60 and C70 as nucleating layers on single-crystal Si surfaces is presented. It is shown that a thin layer (approximately 1000 Å) of pure carbon C70 is sufficient for the nucleation and growth of fine grain polycrystalline diamond films. The enhancement of nucleation by the C70 layer is nearly ten orders of magnitude over an untreated Si surface. It also follows that C clusters can be used as a one-step lithographic template for growing diamond on selected regions of the substrate. In addition, insight into the mechanism for diamond nucleation from C clusters is given.

AB - A unique method for nucleating diamond films on surfaces using C clusters is described. The process substitutes the need for diamond polish pretreatment of substrates prior to diamond film growth, as currently practiced in low-pressure (60 and C70 as nucleating layers on single-crystal Si surfaces is presented. It is shown that a thin layer (approximately 1000 Å) of pure carbon C70 is sufficient for the nucleation and growth of fine grain polycrystalline diamond films. The enhancement of nucleation by the C70 layer is nearly ten orders of magnitude over an untreated Si surface. It also follows that C clusters can be used as a one-step lithographic template for growing diamond on selected regions of the substrate. In addition, insight into the mechanism for diamond nucleation from C clusters is given.

UR - http://www.scopus.com/inward/record.url?scp=0000375228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000375228&partnerID=8YFLogxK

U2 - 10.1063/1.105678

DO - 10.1063/1.105678

M3 - Article

AN - SCOPUS:0000375228

VL - 59

SP - 3461

EP - 3463

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -