Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation

A. Ourmazd; D. W. Taylor; J. Bevk; B. A. Davidson; Leonard C Feldman; J. P. Mannaerts

doi:10.1103/PhysRevLett.57.1332

Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation

A. Ourmazd, D. W. Taylor, J. Bevk, B. A. Davidson, Leonard C Feldman, J. P. Mannaerts

Rutgers University

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report the observation of a (5×5) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (5×5) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.

Original language	English
Pages (from-to)	1332-1335
Number of pages	4
Journal	Physical Review Letters
Volume	57
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.57.1332
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.57.1332

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AU - Ourmazd, A.

AU - Taylor, D. W.

AU - Bevk, J.

AU - Davidson, B. A.

AU - Feldman, Leonard C

AU - Mannaerts, J. P.

PY - 1986

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AB - We report the observation of a (5×5) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (5×5) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.

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