Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation

A. Ourmazd, D. W. Taylor, J. Bevk, B. A. Davidson, Leonard C Feldman, J. P. Mannaerts

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the observation of a (5×5) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (5×5) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.

Original languageEnglish
Pages (from-to)1332-1335
Number of pages4
JournalPhysical Review Letters
Volume57
Issue number11
DOIs
Publication statusPublished - 1986

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oxides
silicon
electron microscopes
stabilization
annealing
high resolution
air
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation. / Ourmazd, A.; Taylor, D. W.; Bevk, J.; Davidson, B. A.; Feldman, Leonard C; Mannaerts, J. P.

In: Physical Review Letters, Vol. 57, No. 11, 1986, p. 1332-1335.

Research output: Contribution to journalArticle

Ourmazd, A. ; Taylor, D. W. ; Bevk, J. ; Davidson, B. A. ; Feldman, Leonard C ; Mannaerts, J. P. / Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation. In: Physical Review Letters. 1986 ; Vol. 57, No. 11. pp. 1332-1335.
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