Abstract
We report the observation of a (5×5) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (5×5) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 1332-1335 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 57 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ourmazd, A., Taylor, D. W., Bevk, J., Davidson, B. A., Feldman, L. C., & Mannaerts, J. P. (1986). Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide Formation. Physical Review Letters, 57(11), 1332-1335. https://doi.org/10.1103/PhysRevLett.57.1332