Abstract
We report the observation of a (5×5) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (5×5) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.
Original language | English |
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Pages (from-to) | 1332-1335 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 57 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy(all)