Abstract
A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 138 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - Mar 2 1984 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
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Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys. / Gossmann, H. J.; Bean, J. C.; Feldman, Leonard C; Gibson, W. M.
In: Surface Science, Vol. 138, No. 2-3, 02.03.1984.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys
AU - Gossmann, H. J.
AU - Bean, J. C.
AU - Feldman, Leonard C
AU - Gibson, W. M.
PY - 1984/3/2
Y1 - 1984/3/2
N2 - A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.
AB - A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.
UR - http://www.scopus.com/inward/record.url?scp=0041926204&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0041926204&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(84)90247-4
DO - 10.1016/0039-6028(84)90247-4
M3 - Article
AN - SCOPUS:0041926204
VL - 138
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 2-3
ER -