Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys

H. J. Gossmann, J. C. Bean, Leonard C Feldman, W. M. Gibson

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.

Original languageEnglish
JournalSurface Science
Volume138
Issue number2-3
DOIs
Publication statusPublished - Mar 2 1984

Fingerprint

Low energy electron diffraction
Molecular beam epitaxy
Surface structure
Diffraction patterns
molecular beam epitaxy
diffraction patterns
electron diffraction
Semiconductor materials
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys. / Gossmann, H. J.; Bean, J. C.; Feldman, Leonard C; Gibson, W. M.

In: Surface Science, Vol. 138, No. 2-3, 02.03.1984.

Research output: Contribution to journalArticle

Gossmann, H. J. ; Bean, J. C. ; Feldman, Leonard C ; Gibson, W. M. / Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys. In: Surface Science. 1984 ; Vol. 138, No. 2-3.
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