Abstract
A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.
Original language | English |
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Journal | Surface Science |
Volume | 138 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - Mar 2 1984 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces