Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys

H. J. Gossmann, J. C. Bean, Leonard C Feldman, W. M. Gibson

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Abstract

A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.

Original languageEnglish
JournalSurface Science
Volume138
Issue number2-3
DOIs
Publication statusPublished - Mar 2 1984

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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