Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys

H. J. Gossmann; J. C. Bean; Leonard C Feldman; W. M. Gibson

doi:10.1016/0039-6028(84)90247-4

Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys

H. J. Gossmann, J. C. Bean, Leonard C Feldman, W. M. Gibson

Rutgers University

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

A sharp (5 × 5) low energy electron diffraction pattern has been observed in Ge_xSi_1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.

Original language	English
Journal	Surface Science
Volume	138
Issue number	2-3
DOIs	https://doi.org/10.1016/0039-6028(84)90247-4
Publication status	Published - Mar 2 1984

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Condensed Matter Physics
Surfaces and Interfaces

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@article{76053a1d89c74a1e994a397e63d7bbd9,

title = "Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys",

abstract = "A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.",

author = "Gossmann, {H. J.} and Bean, {J. C.} and Feldman, {Leonard C} and Gibson, {W. M.}",

year = "1984",

month = mar,

day = "2",

doi = "10.1016/0039-6028(84)90247-4",

language = "English",

volume = "138",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Observation of a (5 × 5) leed pattern from GexSi1-x(111) alloys

AU - Gossmann, H. J.

AU - Bean, J. C.

AU - Feldman, Leonard C

AU - Gibson, W. M.

PY - 1984/3/2

Y1 - 1984/3/2

N2 - A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.

AB - A sharp (5 × 5) low energy electron diffraction pattern has been observed in GexSi1-x(111) alloy films grown by molecular beam epitaxy on Si(111). This paper describes the growth conditions for this structure and possible implications for semiconductor surface structure analysis.

UR - http://www.scopus.com/inward/record.url?scp=0041926204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041926204&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(84)90247-4

DO - 10.1016/0039-6028(84)90247-4

M3 - Article

AN - SCOPUS:0041926204

VL - 138

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 2-3

ER -