Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

Fang Ou, D. Bruce Buchholz, Fei Yi, Boyang Liu, Chunhan Hseih, Robert P. H. Chang, Seng Tiong Ho

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.

Original languageEnglish
Pages (from-to)1341-1345
Number of pages5
JournalACS Applied Materials and Interfaces
Volume3
Issue number4
DOIs
Publication statusPublished - Apr 27 2011

Fingerprint

Indium phosphide
Ohmic contacts
Cadmium
Oxides
Hydrogen
Plasmas
Substrates
Contact resistance
Pulsed laser deposition
Oxide films
cadmium oxide
indium phosphide

Keywords

  • CdO
  • III-V semiconductor
  • Ohmic contact
  • PLD
  • surface pretreatment
  • TCO

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide. / Ou, Fang; Buchholz, D. Bruce; Yi, Fei; Liu, Boyang; Hseih, Chunhan; Chang, Robert P. H.; Ho, Seng Tiong.

In: ACS Applied Materials and Interfaces, Vol. 3, No. 4, 27.04.2011, p. 1341-1345.

Research output: Contribution to journalArticle

Ou, Fang ; Buchholz, D. Bruce ; Yi, Fei ; Liu, Boyang ; Hseih, Chunhan ; Chang, Robert P. H. ; Ho, Seng Tiong. / Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide. In: ACS Applied Materials and Interfaces. 2011 ; Vol. 3, No. 4. pp. 1341-1345.
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