Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact's barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the barrier height from the epitaxial results along with a variable activated acceptor doping concentration which is adjusted to give agreement with measured room temperature specific contact resistances. Specific contact resistances as low as 7×10-10 ohm-cm2 fabricated on the Si face have been obtained to epitaxial 4H p-type material whereas contacts to implanted material result in much larger contact resistance values of 4×10-5 ohm-cm2. These results, when compared to theoretical calculations, indicate that activated acceptor doping concentrations in heavily implanted material are on the order of 2% of the implant concentration.