Ohmic contacts to P-type epitaxial and implanted 4H-SiC

J. Crofton, J. R. Williams, A. V. Adedeji, J. D. Scofield, S. Dhar, Leonard C Feldman, M. J. Bozack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact's barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the barrier height from the epitaxial results along with a variable activated acceptor doping concentration which is adjusted to give agreement with measured room temperature specific contact resistances. Specific contact resistances as low as 7×10-10 ohm-cm2 fabricated on the Si face have been obtained to epitaxial 4H p-type material whereas contacts to implanted material result in much larger contact resistance values of 4×10-5 ohm-cm2. These results, when compared to theoretical calculations, indicate that activated acceptor doping concentrations in heavily implanted material are on the order of 2% of the implant concentration.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages895-898
Number of pages4
Volume527-529
EditionPART 2
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Ohmic contacts
Contact resistance
Doping (additives)
Nickel
Temperature measurement
Temperature

Keywords

  • Contact resistance
  • Implanted material
  • Ohmic contacts

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Crofton, J., Williams, J. R., Adedeji, A. V., Scofield, J. D., Dhar, S., Feldman, L. C., & Bozack, M. J. (2006). Ohmic contacts to P-type epitaxial and implanted 4H-SiC. In Materials Science Forum (PART 2 ed., Vol. 527-529, pp. 895-898). (Materials Science Forum; Vol. 527-529, No. PART 2).

Ohmic contacts to P-type epitaxial and implanted 4H-SiC. / Crofton, J.; Williams, J. R.; Adedeji, A. V.; Scofield, J. D.; Dhar, S.; Feldman, Leonard C; Bozack, M. J.

Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. p. 895-898 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crofton, J, Williams, JR, Adedeji, AV, Scofield, JD, Dhar, S, Feldman, LC & Bozack, MJ 2006, Ohmic contacts to P-type epitaxial and implanted 4H-SiC. in Materials Science Forum. PART 2 edn, vol. 527-529, Materials Science Forum, no. PART 2, vol. 527-529, pp. 895-898, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Crofton J, Williams JR, Adedeji AV, Scofield JD, Dhar S, Feldman LC et al. Ohmic contacts to P-type epitaxial and implanted 4H-SiC. In Materials Science Forum. PART 2 ed. Vol. 527-529. 2006. p. 895-898. (Materials Science Forum; PART 2).
Crofton, J. ; Williams, J. R. ; Adedeji, A. V. ; Scofield, J. D. ; Dhar, S. ; Feldman, Leonard C ; Bozack, M. J. / Ohmic contacts to P-type epitaxial and implanted 4H-SiC. Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. pp. 895-898 (Materials Science Forum; PART 2).
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