On the electronic structure of Si3O2 and its anion

Michel Dupuis, John B. Nicholas

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In a previous study (Wang, L. S., Nicholas, J. B., Dupuis, M., Wu, H., and Colson, S. D., 1997, Phys. Rev. Lett., 78, 4450) of small silicon oxide clusters with stochiometry Si3Oy(y = 1-6), it was found that the molecule Si3O2 and its anion required special theoretical attention. This is due to a particular electronic structure feature of the neutral cluster: the s, p hybrid atomic orbitals of the two bonded silicon atoms give rise to a low lying empty π molecular orbital. As a result the ground state of Si3O2 has a triplet spin, and a state of singlet spin is a low lying excited electronic state at about 0.5 eV above the triplet state. Ab initio molecular orbital calculations show that photoelectron detachment proceeds from the 2B1 state of the anion to the 3B1 ground state of the neutral cluster. Detachment via the 1A1 state of the neutral cluster lies in the shoulder of the detachment via the triplet state.

Original languageEnglish
Pages (from-to)549-553
Number of pages5
JournalMolecular Physics
Issue number4
Publication statusPublished - Feb 1999

ASJC Scopus subject areas

  • Biophysics
  • Molecular Biology
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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