On the mechanism of ultra thin silicon oxide film growth during thermal oxidation

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50 Angstrom films. For very thin oxide films (15 Angstrom or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsPeter Borgesen, Klavs F. Jensen, Roger A. Pollak
PublisherPubl by Materials Research Society
Pages69-74
Number of pages6
Volume318
ISBN (Print)1558992170
Publication statusPublished - 1994
EventProceedings of the Fall 1993 MRS Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the Fall 1993 MRS Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

Fingerprint

Silicon oxides
Film growth
Oxide films
Silicon
Oxidation
Oxides
Thin films
Isotopes
X ray photoelectron spectroscopy
Spectroscopy
Scattering
Ions
Oxygen
Atoms
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gusev, E. P., Lu, H. C., Gustafsson, T., & Garfunkel, E. (1994). On the mechanism of ultra thin silicon oxide film growth during thermal oxidation. In P. Borgesen, K. F. Jensen, & R. A. Pollak (Eds.), Materials Research Society Symposium Proceedings (Vol. 318, pp. 69-74). Publ by Materials Research Society.

On the mechanism of ultra thin silicon oxide film growth during thermal oxidation. / Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.

Materials Research Society Symposium Proceedings. ed. / Peter Borgesen; Klavs F. Jensen; Roger A. Pollak. Vol. 318 Publ by Materials Research Society, 1994. p. 69-74.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gusev, EP, Lu, HC, Gustafsson, T & Garfunkel, E 1994, On the mechanism of ultra thin silicon oxide film growth during thermal oxidation. in P Borgesen, KF Jensen & RA Pollak (eds), Materials Research Society Symposium Proceedings. vol. 318, Publ by Materials Research Society, pp. 69-74, Proceedings of the Fall 1993 MRS Meeting, Boston, MA, USA, 11/29/93.
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. On the mechanism of ultra thin silicon oxide film growth during thermal oxidation. In Borgesen P, Jensen KF, Pollak RA, editors, Materials Research Society Symposium Proceedings. Vol. 318. Publ by Materials Research Society. 1994. p. 69-74
Gusev, E. P. ; Lu, H. C. ; Gustafsson, T. ; Garfunkel, Eric. / On the mechanism of ultra thin silicon oxide film growth during thermal oxidation. Materials Research Society Symposium Proceedings. editor / Peter Borgesen ; Klavs F. Jensen ; Roger A. Pollak. Vol. 318 Publ by Materials Research Society, 1994. pp. 69-74
@inproceedings{83696a8f08e246f79111ee83da2c9171,
title = "On the mechanism of ultra thin silicon oxide film growth during thermal oxidation",
abstract = "The growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50 Angstrom films. For very thin oxide films (15 Angstrom or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.",
author = "Gusev, {E. P.} and Lu, {H. C.} and T. Gustafsson and Eric Garfunkel",
year = "1994",
language = "English",
isbn = "1558992170",
volume = "318",
pages = "69--74",
editor = "Peter Borgesen and Jensen, {Klavs F.} and Pollak, {Roger A.}",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - On the mechanism of ultra thin silicon oxide film growth during thermal oxidation

AU - Gusev, E. P.

AU - Lu, H. C.

AU - Gustafsson, T.

AU - Garfunkel, Eric

PY - 1994

Y1 - 1994

N2 - The growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50 Angstrom films. For very thin oxide films (15 Angstrom or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.

AB - The growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50 Angstrom films. For very thin oxide films (15 Angstrom or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.

UR - http://www.scopus.com/inward/record.url?scp=0028132411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028132411&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028132411

SN - 1558992170

VL - 318

SP - 69

EP - 74

BT - Materials Research Society Symposium Proceedings

A2 - Borgesen, Peter

A2 - Jensen, Klavs F.

A2 - Pollak, Roger A.

PB - Publ by Materials Research Society

ER -