On the poisson ratio and XRD determination of strain in thin films of Ce0.8Gd0.2O1.9

Anna Kossoy, Ellen Wachtel, Igor Lubomirsky

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17 Citations (Scopus)


XRD measurement of the room temperature in-plane and out-of-plane d-spacings of the (422) diffraction peak of 11 thin film samples of fluorite Ce0.8Gd0.2O1.9 demonstrates that the zz and xx (=yy) components of the strain tensor for this material are not related via a constant, i.e. the Poisson ratio, as is the case for elastic materials. Rather, these strains are independent. We attribute this behavior to the inelastic character of Ce0.8Gd0.2O1.9 deriving from the chemical strain effect, i.e. the lability of point defect-containing complexes under stress. Chemical strain is dependent on the thermal and mechanical history of the film, and above 200 C, is no longer observed, being transformed into elastic strain and stress. This transformation may compromise the mechanical stability of Ce0.8Gd0.2O1.9 containing devices, which must operate over a broad temperature range. Measurements analogous to those described here can assist in predicting the magnitude of such an effect.

Original languageEnglish
Pages (from-to)47-50
Number of pages4
JournalJournal of Electroceramics
Issue number1
Publication statusPublished - Feb 2014


  • Chemical strain
  • Gd-doped ceria
  • Thin films
  • XRD-strain measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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