Optical & electronic properties of carbon nitride thin films

Manish Chhowalla, R. A. Aharonov, M. Akiyama, G. A J Amaratunga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have deposited carbon nitride (CNx) films by magnetron sputtering at varying nitrogen pressures and substrate temperatures. The films were deposited on silicon and quartz substrates simultaneously. The incoming ion energy was controlled by a radio frequency power supply. A magnet in front of the substrate holder was used to enhance the plasma density. The films deposited at room temperature (RT) were found to have nitrogen content of ≥ 40%. These films were semiconducting with an optical bandgap of greater than 2 eV and a RT resistivity of 1012 Ω-cm. Films deposited at low nitrogen pressure (≤ 7 mtorr), at RT and in the presence of a 15 mtesla magnetic field were found to be hard and also exhibited extremely high elastic recovery. The most interesting result we found was that the hard and elastic CN films were also semiconducting with an optical band gap of 1.7 eV, RT resistivity of 107 Ω-cm and an activation energy of 0.8 eV. In all cases the CN films were almost entirely sp2 bonded.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages259-264
Number of pages6
Volume498
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period12/1/9712/4/97

Fingerprint

Carbon nitride
Electronic properties
Thin films
Nitrogen
Optical band gaps
Substrates
Temperature
Semiconducting films
Quartz
Plasma density
Silicon
Magnetron sputtering
Magnets
cyanogen
Activation energy
Ions
Magnetic fields
Recovery

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chhowalla, M., Aharonov, R. A., Akiyama, M., & Amaratunga, G. A. J. (1997). Optical & electronic properties of carbon nitride thin films. In Materials Research Society Symposium - Proceedings (Vol. 498, pp. 259-264). MRS.

Optical & electronic properties of carbon nitride thin films. / Chhowalla, Manish; Aharonov, R. A.; Akiyama, M.; Amaratunga, G. A J.

Materials Research Society Symposium - Proceedings. Vol. 498 MRS, 1997. p. 259-264.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chhowalla, M, Aharonov, RA, Akiyama, M & Amaratunga, GAJ 1997, Optical & electronic properties of carbon nitride thin films. in Materials Research Society Symposium - Proceedings. vol. 498, MRS, pp. 259-264, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 12/1/97.
Chhowalla M, Aharonov RA, Akiyama M, Amaratunga GAJ. Optical & electronic properties of carbon nitride thin films. In Materials Research Society Symposium - Proceedings. Vol. 498. MRS. 1997. p. 259-264
Chhowalla, Manish ; Aharonov, R. A. ; Akiyama, M. ; Amaratunga, G. A J. / Optical & electronic properties of carbon nitride thin films. Materials Research Society Symposium - Proceedings. Vol. 498 MRS, 1997. pp. 259-264
@inproceedings{f2d61cf5d6184a55ab6c51875f733341,
title = "Optical & electronic properties of carbon nitride thin films",
abstract = "We have deposited carbon nitride (CNx) films by magnetron sputtering at varying nitrogen pressures and substrate temperatures. The films were deposited on silicon and quartz substrates simultaneously. The incoming ion energy was controlled by a radio frequency power supply. A magnet in front of the substrate holder was used to enhance the plasma density. The films deposited at room temperature (RT) were found to have nitrogen content of ≥ 40{\%}. These films were semiconducting with an optical bandgap of greater than 2 eV and a RT resistivity of 1012 Ω-cm. Films deposited at low nitrogen pressure (≤ 7 mtorr), at RT and in the presence of a 15 mtesla magnetic field were found to be hard and also exhibited extremely high elastic recovery. The most interesting result we found was that the hard and elastic CN films were also semiconducting with an optical band gap of 1.7 eV, RT resistivity of 107 Ω-cm and an activation energy of 0.8 eV. In all cases the CN films were almost entirely sp2 bonded.",
author = "Manish Chhowalla and Aharonov, {R. A.} and M. Akiyama and Amaratunga, {G. A J}",
year = "1997",
language = "English",
volume = "498",
pages = "259--264",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Optical & electronic properties of carbon nitride thin films

AU - Chhowalla, Manish

AU - Aharonov, R. A.

AU - Akiyama, M.

AU - Amaratunga, G. A J

PY - 1997

Y1 - 1997

N2 - We have deposited carbon nitride (CNx) films by magnetron sputtering at varying nitrogen pressures and substrate temperatures. The films were deposited on silicon and quartz substrates simultaneously. The incoming ion energy was controlled by a radio frequency power supply. A magnet in front of the substrate holder was used to enhance the plasma density. The films deposited at room temperature (RT) were found to have nitrogen content of ≥ 40%. These films were semiconducting with an optical bandgap of greater than 2 eV and a RT resistivity of 1012 Ω-cm. Films deposited at low nitrogen pressure (≤ 7 mtorr), at RT and in the presence of a 15 mtesla magnetic field were found to be hard and also exhibited extremely high elastic recovery. The most interesting result we found was that the hard and elastic CN films were also semiconducting with an optical band gap of 1.7 eV, RT resistivity of 107 Ω-cm and an activation energy of 0.8 eV. In all cases the CN films were almost entirely sp2 bonded.

AB - We have deposited carbon nitride (CNx) films by magnetron sputtering at varying nitrogen pressures and substrate temperatures. The films were deposited on silicon and quartz substrates simultaneously. The incoming ion energy was controlled by a radio frequency power supply. A magnet in front of the substrate holder was used to enhance the plasma density. The films deposited at room temperature (RT) were found to have nitrogen content of ≥ 40%. These films were semiconducting with an optical bandgap of greater than 2 eV and a RT resistivity of 1012 Ω-cm. Films deposited at low nitrogen pressure (≤ 7 mtorr), at RT and in the presence of a 15 mtesla magnetic field were found to be hard and also exhibited extremely high elastic recovery. The most interesting result we found was that the hard and elastic CN films were also semiconducting with an optical band gap of 1.7 eV, RT resistivity of 107 Ω-cm and an activation energy of 0.8 eV. In all cases the CN films were almost entirely sp2 bonded.

UR - http://www.scopus.com/inward/record.url?scp=0031365440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031365440&partnerID=8YFLogxK

M3 - Conference contribution

VL - 498

SP - 259

EP - 264

BT - Materials Research Society Symposium - Proceedings

PB - MRS

ER -