Abstract
The halide perovskitoid compound Cs3Bi2I9 (CBI) has attracted considerable interest as a semiconductor because of its outstanding stability and reduced toxicity compared with lead-based halide perovskites. Here, we report the growth of nuclear radiation detection grade CBI bulk crystals (Φ 15 × 60 mm3) with a high resistivity of over 1010 Ω cm using a modified vertical Bridgman method. Because of their layered crystal structures we investigated the anisotropy in the optical and electrical properties using different crystal orientations. The CBI(001) sample exhibits a resistivity of ∼1012 Ω cm compared to ∼1010 Ω cm for the CBI(100) sample. This is due to the anisotropic mobility in the two crystallographic directions. Using 425 nm LED (∼200 mW cm−2) illumination CBI(001) possesses a superior optical response with a switching ratio of over 40, which is critically higher than that of CBI(100) (<2). Detectors of 2 mm thickness show a capability of detecting 241Am@5.49 MeV α particles, with good peak discrimination. A full width at half maximum (FWHM) of 32% was obtained under a bias of 560 V. Simultaneously, the electron mobility and mobility lifetime (μτ) were calculated to be 6.10 cm2 V−1 s−1 and 2.03 × 10−5 cm V−1, respectively. First-principles density functional theory calculations confirm the crystallographic anisotropy of the carrier effective masses. In addition, a significant X-ray sensitivity of 111.9 μC Gy−1 cm−2 for a CBI detector was observed, under 80 kVp X-rays at an electrical field of 450 V cm−1.
| Original language | English |
|---|---|
| Pages (from-to) | 23388-23395 |
| Number of pages | 8 |
| Journal | Journal of Materials Chemistry A |
| Volume | 6 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - Jan 1 2018 |
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ASJC Scopus subject areas
- Chemistry(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
Cite this
Optical and electronic anisotropies in perovskitoid crystals of Cs3Bi2I9 studies of nuclear radiation detection. / Sun, Qihao; Xu, Yadong; Zhang, Hongjian; Xiao, Bao; Liu, Xin; Dong, Jiangpeng; Cheng, Yuanbo; Zhang, Binbin; Jie, Wanqi; Kanatzidis, Mercouri G.
In: Journal of Materials Chemistry A, Vol. 6, No. 46, 01.01.2018, p. 23388-23395.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Optical and electronic anisotropies in perovskitoid crystals of Cs3Bi2I9 studies of nuclear radiation detection
AU - Sun, Qihao
AU - Xu, Yadong
AU - Zhang, Hongjian
AU - Xiao, Bao
AU - Liu, Xin
AU - Dong, Jiangpeng
AU - Cheng, Yuanbo
AU - Zhang, Binbin
AU - Jie, Wanqi
AU - Kanatzidis, Mercouri G
PY - 2018/1/1
Y1 - 2018/1/1
N2 - The halide perovskitoid compound Cs3Bi2I9 (CBI) has attracted considerable interest as a semiconductor because of its outstanding stability and reduced toxicity compared with lead-based halide perovskites. Here, we report the growth of nuclear radiation detection grade CBI bulk crystals (Φ 15 × 60 mm3) with a high resistivity of over 1010 Ω cm using a modified vertical Bridgman method. Because of their layered crystal structures we investigated the anisotropy in the optical and electrical properties using different crystal orientations. The CBI(001) sample exhibits a resistivity of ∼1012 Ω cm compared to ∼1010 Ω cm for the CBI(100) sample. This is due to the anisotropic mobility in the two crystallographic directions. Using 425 nm LED (∼200 mW cm−2) illumination CBI(001) possesses a superior optical response with a switching ratio of over 40, which is critically higher than that of CBI(100) (<2). Detectors of 2 mm thickness show a capability of detecting 241Am@5.49 MeV α particles, with good peak discrimination. A full width at half maximum (FWHM) of 32% was obtained under a bias of 560 V. Simultaneously, the electron mobility and mobility lifetime (μτ) were calculated to be 6.10 cm2 V−1 s−1 and 2.03 × 10−5 cm V−1, respectively. First-principles density functional theory calculations confirm the crystallographic anisotropy of the carrier effective masses. In addition, a significant X-ray sensitivity of 111.9 μC Gy−1 cm−2 for a CBI detector was observed, under 80 kVp X-rays at an electrical field of 450 V cm−1.
AB - The halide perovskitoid compound Cs3Bi2I9 (CBI) has attracted considerable interest as a semiconductor because of its outstanding stability and reduced toxicity compared with lead-based halide perovskites. Here, we report the growth of nuclear radiation detection grade CBI bulk crystals (Φ 15 × 60 mm3) with a high resistivity of over 1010 Ω cm using a modified vertical Bridgman method. Because of their layered crystal structures we investigated the anisotropy in the optical and electrical properties using different crystal orientations. The CBI(001) sample exhibits a resistivity of ∼1012 Ω cm compared to ∼1010 Ω cm for the CBI(100) sample. This is due to the anisotropic mobility in the two crystallographic directions. Using 425 nm LED (∼200 mW cm−2) illumination CBI(001) possesses a superior optical response with a switching ratio of over 40, which is critically higher than that of CBI(100) (<2). Detectors of 2 mm thickness show a capability of detecting 241Am@5.49 MeV α particles, with good peak discrimination. A full width at half maximum (FWHM) of 32% was obtained under a bias of 560 V. Simultaneously, the electron mobility and mobility lifetime (μτ) were calculated to be 6.10 cm2 V−1 s−1 and 2.03 × 10−5 cm V−1, respectively. First-principles density functional theory calculations confirm the crystallographic anisotropy of the carrier effective masses. In addition, a significant X-ray sensitivity of 111.9 μC Gy−1 cm−2 for a CBI detector was observed, under 80 kVp X-rays at an electrical field of 450 V cm−1.
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U2 - 10.1039/c8ta09525f
DO - 10.1039/c8ta09525f
M3 - Article
AN - SCOPUS:85057527958
VL - 6
SP - 23388
EP - 23395
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
SN - 2050-7488
IS - 46
ER -