Optical and structural characterization of copper indium disulfide thin films

D. O. Henderson, R. Mu, A. Ueda, M. H. Wu, E. M. Gordon, Y. S. Tung, M. Huang, J. Keay, L. C. Feldman, J. A. Hollingsworth, W. E. Buhro, J. D. Harris, A. F. Hepp, R. P. Raffaelle

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25 Citations (Scopus)

Abstract

Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm-1.

Original languageEnglish
Pages (from-to)585-589
Number of pages5
JournalMaterials and Design
Volume22
Issue number7
DOIs
Publication statusPublished - Oct 2001

Keywords

  • Optical
  • Semi-conductors
  • Vapour deposition

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Henderson, D. O., Mu, R., Ueda, A., Wu, M. H., Gordon, E. M., Tung, Y. S., Huang, M., Keay, J., Feldman, L. C., Hollingsworth, J. A., Buhro, W. E., Harris, J. D., Hepp, A. F., & Raffaelle, R. P. (2001). Optical and structural characterization of copper indium disulfide thin films. Materials and Design, 22(7), 585-589. https://doi.org/10.1016/S0261-3069(01)00019-X