Abstract
Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge - realization of lasing with electrical injection - remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ∼18 A cm(-2) without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm(-2) we achieve the population inversion of the band-edge states.
| Original language | English |
|---|---|
| Pages (from-to) | 42-48 |
| Number of pages | 7 |
| Journal | Nature Materials |
| Volume | 17 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1 2018 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Optical gain in colloidal quantum dots achieved with direct-current electrical pumping. / Lim, Jaehoon; Park, Young Shin; Klimov, Victor I.
In: Nature Materials, Vol. 17, No. 1, 01.01.2018, p. 42-48.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical gain in colloidal quantum dots achieved with direct-current electrical pumping
AU - Lim, Jaehoon
AU - Park, Young Shin
AU - Klimov, Victor I
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge - realization of lasing with electrical injection - remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ∼18 A cm(-2) without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm(-2) we achieve the population inversion of the band-edge states.
AB - Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge - realization of lasing with electrical injection - remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ∼18 A cm(-2) without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm(-2) we achieve the population inversion of the band-edge states.
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U2 - 10.1038/NMAT5011
DO - 10.1038/NMAT5011
M3 - Article
VL - 17
SP - 42
EP - 48
JO - Nature Materials
JF - Nature Materials
SN - 1476-1122
IS - 1
ER -