Optical investigation of defects in semi-insulating Tl6 I4S single crystals

J. A. Peters; M. Sebastian; S. Nguyen; Zhifu Liu; Jino Im; A. J. Freeman; M. G. Kanatzidis; B. W. Wessels

doi:10.1103/PhysRevB.90.035205

Optical investigation of defects in semi-insulating Tl6 I4S single crystals

J. A. Peters, M. Sebastian, S. Nguyen, Zhifu Liu, Jino Im, A. J. Freeman, M. G. Kanatzidis, B. W. Wessels

Northwestern University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

Original language	English
Article number	035205
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	90
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.90.035205
Publication status	Published - Jul 18 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Optical investigation of defects in semi-insulating Tl6 I4S single crystals",

abstract = "Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.",

author = "Peters, {J. A.} and M. Sebastian and S. Nguyen and Zhifu Liu and Jino Im and Freeman, {A. J.} and Kanatzidis, {M. G.} and Wessels, {B. W.}",

year = "2014",

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doi = "10.1103/PhysRevB.90.035205",

language = "English",

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AU - Peters, J. A.

AU - Sebastian, M.

AU - Nguyen, S.

AU - Liu, Zhifu

AU - Im, Jino

AU - Freeman, A. J.

AU - Kanatzidis, M. G.

AU - Wessels, B. W.

PY - 2014/7/18

Y1 - 2014/7/18

N2 - Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

AB - Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

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