Optical investigation of defects in semi-insulating Tl6 I4S single crystals

J. A. Peters, M. Sebastian, S. Nguyen, Zhifu Liu, Jino Im, Arthur J Freeman, Mercouri G Kanatzidis, B. W. Wessels

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

Original languageEnglish
Article number035205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number3
DOIs
Publication statusPublished - Jul 18 2014

Fingerprint

Vacancies
Photoluminescence
Photoconductivity
Single crystals
photoluminescence
Defects
single crystals
defects
photoconductivity
Photoluminescence spectroscopy
Conduction bands
Sulfur
antisite defects
Luminescence
International System of Units
Temperature
conduction bands
sulfur
luminescence
configurations

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Optical investigation of defects in semi-insulating Tl6 I4S single crystals. / Peters, J. A.; Sebastian, M.; Nguyen, S.; Liu, Zhifu; Im, Jino; Freeman, Arthur J; Kanatzidis, Mercouri G; Wessels, B. W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 3, 035205, 18.07.2014.

Research output: Contribution to journalArticle

@article{8c5a65ea5e91479bb3782e49ead72846,
title = "Optical investigation of defects in semi-insulating Tl6 I4S single crystals",
abstract = "Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.",
author = "Peters, {J. A.} and M. Sebastian and S. Nguyen and Zhifu Liu and Jino Im and Freeman, {Arthur J} and Kanatzidis, {Mercouri G} and Wessels, {B. W.}",
year = "2014",
month = "7",
day = "18",
doi = "10.1103/PhysRevB.90.035205",
language = "English",
volume = "90",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Optical investigation of defects in semi-insulating Tl6 I4S single crystals

AU - Peters, J. A.

AU - Sebastian, M.

AU - Nguyen, S.

AU - Liu, Zhifu

AU - Im, Jino

AU - Freeman, Arthur J

AU - Kanatzidis, Mercouri G

AU - Wessels, B. W.

PY - 2014/7/18

Y1 - 2014/7/18

N2 - Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

AB - Native defect levels in ternary compound Tl6I4S single crystals were studied by low-temperature photoluminescence (PL) and photoconductivity (PC) measurements. From the PL measurements, a broad emission band centered at 1.64 eV was observed at low temperatures. The peak can be decomposed using two standard Gaussian functions to reveal two emission bands at 1.55 and 1.66 eV. The PL peak at 1.55 eV is attributed to donor-acceptor pair recombination between a sulphur vacancy (VS) deep donor (Ed=0.57eV) and an antisite defect (SI) shallow acceptor (Ea=20meV). The 1.66-eV emission band is attributed to self-activated luminescence involving a defect complex and is described using a configuration coordinate model. Within this framework, the 1.66-eV emission band is associated with a S vacancy donor bound to a Tl vacancy acceptor that forms a VS-VTl Schottky pair. The photoconductivity spectra show the presence of a deep donor level located at 0.46 eV below the conduction-band edge, in good agreement with that measured by PL spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=84904677711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904677711&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.90.035205

DO - 10.1103/PhysRevB.90.035205

M3 - Article

VL - 90

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 3

M1 - 035205

ER -