Optical properties of subwavelength hole arrays in vanadium dioxide thin films

E. U. Donev; J. Y. Suh; F. Villegas; R. Lopez; R. F. Haglund; L. C. Feldman

doi:10.1103/PhysRevB.73.201401

Optical properties of subwavelength hole arrays in vanadium dioxide thin films

E. U. Donev, J. Y. Suh, F. Villegas, R. Lopez, R. F. Haglund, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

Original language	English
Article number	201401
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.73.201401
Publication status	Published - May 22 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.",

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AU - Donev, E. U.

AU - Suh, J. Y.

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AU - Lopez, R.

AU - Haglund, R. F.

AU - Feldman, L. C.

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AB - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

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