Abstract
We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.
| Original language | English |
|---|---|
| Article number | 201401 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 73 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2006 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Optical properties of subwavelength hole arrays in vanadium dioxide thin films. / Donev, E. U.; Suh, J. Y.; Villegas, F.; Lopez, R.; Haglund, R. F.; Feldman, Leonard C.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 73, No. 20, 201401, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical properties of subwavelength hole arrays in vanadium dioxide thin films
AU - Donev, E. U.
AU - Suh, J. Y.
AU - Villegas, F.
AU - Lopez, R.
AU - Haglund, R. F.
AU - Feldman, Leonard C
PY - 2006
Y1 - 2006
N2 - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.
AB - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.
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U2 - 10.1103/PhysRevB.73.201401
DO - 10.1103/PhysRevB.73.201401
M3 - Article
AN - SCOPUS:33646578454
VL - 73
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 20
M1 - 201401
ER -