Optical properties of subwavelength hole arrays in vanadium dioxide thin films

E. U. Donev; J. Y. Suh; F. Villegas; R. Lopez; R. F. Haglund; Leonard C Feldman

doi:10.1103/PhysRevB.73.201401

Optical properties of subwavelength hole arrays in vanadium dioxide thin films

E. U. Donev, J. Y. Suh, F. Villegas, R. Lopez, R. F. Haglund, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

Original language	English
Article number	201401
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.73.201401
Publication status	Published - 2006

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ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Donev, E. U., Suh, J. Y., Villegas, F., Lopez, R., Haglund, R. F., & Feldman, L. C. (2006). Optical properties of subwavelength hole arrays in vanadium dioxide thin films. Physical Review B - Condensed Matter and Materials Physics, 73(20), [201401]. https://doi.org/10.1103/PhysRevB.73.201401

@article{ce94abc1316b46c385344a1a93707029,

title = "Optical properties of subwavelength hole arrays in vanadium dioxide thin films",

abstract = "We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.",

author = "Donev, {E. U.} and Suh, {J. Y.} and F. Villegas and R. Lopez and Haglund, {R. F.} and Feldman, {Leonard C}",

year = "2006",

doi = "10.1103/PhysRevB.73.201401",

language = "English",

volume = "73",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "20",

}

TY - JOUR

T1 - Optical properties of subwavelength hole arrays in vanadium dioxide thin films

AU - Donev, E. U.

AU - Suh, J. Y.

AU - Villegas, F.

AU - Lopez, R.

AU - Haglund, R. F.

AU - Feldman, Leonard C

PY - 2006

Y1 - 2006

N2 - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

AB - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

UR - http://www.scopus.com/inward/record.url?scp=33646578454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646578454&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.73.201401

DO - 10.1103/PhysRevB.73.201401

M3 - Article

AN - SCOPUS:33646578454

VL - 73

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 20

M1 - 201401

ER -

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10.1103/PhysRevB.73.201401