Optical properties of subwavelength hole arrays in vanadium dioxide thin films

E. U. Donev, J. Y. Suh, F. Villegas, R. Lopez, R. F. Haglund, Leonard C Feldman

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

Original languageEnglish
Article number201401
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number20
DOIs
Publication statusPublished - 2006

Fingerprint

dioxides
Vanadium
vanadium
Transition metals
Optical properties
Scattering
Semiconductor materials
Infrared radiation
optical properties
Thin films
evanescent waves
Computer simulation
thin films
entrances
far fields
near fields
apertures
transition metals
formalism
augmentation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical properties of subwavelength hole arrays in vanadium dioxide thin films. / Donev, E. U.; Suh, J. Y.; Villegas, F.; Lopez, R.; Haglund, R. F.; Feldman, Leonard C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 73, No. 20, 201401, 2006.

Research output: Contribution to journalArticle

@article{ce94abc1316b46c385344a1a93707029,
title = "Optical properties of subwavelength hole arrays in vanadium dioxide thin films",
abstract = "We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.",
author = "Donev, {E. U.} and Suh, {J. Y.} and F. Villegas and R. Lopez and Haglund, {R. F.} and Feldman, {Leonard C}",
year = "2006",
doi = "10.1103/PhysRevB.73.201401",
language = "English",
volume = "73",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "20",

}

TY - JOUR

T1 - Optical properties of subwavelength hole arrays in vanadium dioxide thin films

AU - Donev, E. U.

AU - Suh, J. Y.

AU - Villegas, F.

AU - Lopez, R.

AU - Haglund, R. F.

AU - Feldman, Leonard C

PY - 2006

Y1 - 2006

N2 - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

AB - We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (V O2) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when V O2 undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.

UR - http://www.scopus.com/inward/record.url?scp=33646578454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646578454&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.73.201401

DO - 10.1103/PhysRevB.73.201401

M3 - Article

VL - 73

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 20

M1 - 201401

ER -