Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Mariana C. Prado, Deep Jariwala, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues.

Original languageEnglish
Article number193111
JournalApplied Physics Letters
Volume102
Issue number19
DOIs
Publication statusPublished - May 13 2013

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spectroscopic analysis
graphene
etching
optimization
atomic force microscopy
etchants
plasma etching
Raman spectroscopy
microscopy
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis. / Prado, Mariana C.; Jariwala, Deep; Marks, Tobin J; Hersam, Mark C.

In: Applied Physics Letters, Vol. 102, No. 19, 193111, 13.05.2013.

Research output: Contribution to journalArticle

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