Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films

V. P. Amarasinghe, L. Wielunski, A. Barcz, Leonard C Feldman, G. K. Celler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC can lead to heterogeneous integration of SiC devices with silicon CMOS circuits, and to reduced cost of SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of the of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 μm thick 4H-SiC exfoliated films, there is an optimum implantation dose of about 6×1016 cm-2 at 180 keV. The layer transfer is more difficult for higher as well as lower doses. Material doping and small changes in crystalline orientation do not have much impact on the exfoliation.

Original languageEnglish
Title of host publicationECS Transactions
Pages341-348
Number of pages8
Volume50
Edition7
DOIs
Publication statusPublished - 2012
Event12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Other

Other12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

Fingerprint

Crystalline materials
Ion implantation
Wafer bonding
Crystal orientation
Ion beams
Doping (additives)
Annealing
Silicon
Networks (circuits)
Substrates
Costs
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Amarasinghe, V. P., Wielunski, L., Barcz, A., Feldman, L. C., & Celler, G. K. (2012). Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. In ECS Transactions (7 ed., Vol. 50, pp. 341-348) https://doi.org/10.1149/05007.0341ecst

Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. / Amarasinghe, V. P.; Wielunski, L.; Barcz, A.; Feldman, Leonard C; Celler, G. K.

ECS Transactions. Vol. 50 7. ed. 2012. p. 341-348.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amarasinghe, VP, Wielunski, L, Barcz, A, Feldman, LC & Celler, GK 2012, Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. in ECS Transactions. 7 edn, vol. 50, pp. 341-348, 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05007.0341ecst
Amarasinghe VP, Wielunski L, Barcz A, Feldman LC, Celler GK. Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. In ECS Transactions. 7 ed. Vol. 50. 2012. p. 341-348 https://doi.org/10.1149/05007.0341ecst
Amarasinghe, V. P. ; Wielunski, L. ; Barcz, A. ; Feldman, Leonard C ; Celler, G. K. / Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. ECS Transactions. Vol. 50 7. ed. 2012. pp. 341-348
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