Abstract
Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC can lead to heterogeneous integration of SiC devices with silicon CMOS circuits, and to reduced cost of SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of the of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 μm thick 4H-SiC exfoliated films, there is an optimum implantation dose of about 6×1016 cm-2 at 180 keV. The layer transfer is more difficult for higher as well as lower doses. Material doping and small changes in crystalline orientation do not have much impact on the exfoliation.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 341-348 |
| Number of pages | 8 |
| Volume | 50 |
| Edition | 7 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012 |
Other
| Other | 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/7/12 → 10/12/12 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films. / Amarasinghe, V. P.; Wielunski, L.; Barcz, A.; Feldman, Leonard C; Celler, G. K.
ECS Transactions. Vol. 50 7. ed. 2012. p. 341-348.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Optimization of H+ implantation parameters for exfoliation of 4H-SiC Films
AU - Amarasinghe, V. P.
AU - Wielunski, L.
AU - Barcz, A.
AU - Feldman, Leonard C
AU - Celler, G. K.
PY - 2012
Y1 - 2012
N2 - Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC can lead to heterogeneous integration of SiC devices with silicon CMOS circuits, and to reduced cost of SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of the of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 μm thick 4H-SiC exfoliated films, there is an optimum implantation dose of about 6×1016 cm-2 at 180 keV. The layer transfer is more difficult for higher as well as lower doses. Material doping and small changes in crystalline orientation do not have much impact on the exfoliation.
AB - Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC can lead to heterogeneous integration of SiC devices with silicon CMOS circuits, and to reduced cost of SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of the of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 μm thick 4H-SiC exfoliated films, there is an optimum implantation dose of about 6×1016 cm-2 at 180 keV. The layer transfer is more difficult for higher as well as lower doses. Material doping and small changes in crystalline orientation do not have much impact on the exfoliation.
UR - http://www.scopus.com/inward/record.url?scp=84885791782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885791782&partnerID=8YFLogxK
U2 - 10.1149/05007.0341ecst
DO - 10.1149/05007.0341ecst
M3 - Conference contribution
SN - 9781607683551
VL - 50
SP - 341
EP - 348
BT - ECS Transactions
ER -