Organic transistors: Improved performance and fast response

Ananth Dodabalapur, Byungwook Woo, Yeon Taek Jeong, Antonio Faccetti, Tobin J Marks, Robert Rotzoll, Siddharth Mohapatra, Michaile Grigas, Robert Wenz, Klaus Dimmler, Larry Dunn, Liang Wang, Taeho Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic field-effect transistors (OFETs) have been proposed for a number of applications including displays, electronic barcodes and sensors. The attractions of low cost processes, large-area circuits and the chemically active nature of organic materials are the chief driving forces to make OFETs important in various applications. FETs based on p-type semiconductors such as pentacene or oligothiophenes in which holes are the majority carriers, have received most of the attention. In contrast to the extensively studied p-type materials, the number of organic compounds with good n-type characteristics is still limited. This is an important problem since n-channel transistors are required for the fabrication of complimentary circuits. Increasing electron affinity of molecules can be achieved by introduction of electron-withdrawing functional groups and the Marks group has successfully synthesized families of carbonyl-substituted oligothiophenes (DFHCO-4T and others) which have achieved high electron mobilities. We describe techniques to form small channel length (4 μm) bottom-contact transistors that will be useful for a number of applications including complementary logic circuits and display drivers. It is very important to pay attention to the details of surface preparation and the interface between the contact metal and the organic semiconductor [1]. The transient response of organic transistors is crucially important in determining the speeds of circuits. One important technical hurdle that has to be overcome for using organic transistors in RFID tags is for these devices to operate at RF frequencies (typically 13.56 MHz) in the front end. It was long thought that organic transistors are too slow for this. In recent work [2], we have shown that organic transistor based full-wave rectifier circuits utilizing pentacene, a p-channel organic semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the non-quasi static (NQS) state of the transistors. We will review the transport phenomena in pentacane transistors and present a model of how fast rectifier circuits will work. Finally, the characteristics of nanoscale organic and polymer transistors are discussed. At small geometries, contacts play an increasingly dominant role.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages851
Number of pages1
Volume2005
DOIs
Publication statusPublished - 2005
Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
Duration: Oct 22 2005Oct 28 2005

Other

Other18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
CountryAustralia
CitySydney
Period10/22/0510/28/05

Fingerprint

Transistors
Networks (circuits)
Organic field effect transistors
Semiconducting organic compounds
Display devices
Electron affinity
Electron mobility
Logic circuits
Field effect transistors
Organic compounds
Radio frequency identification (RFID)
Transient analysis
Functional groups
Semiconductor materials
Fabrication
Molecules
Geometry
Electrons
Sensors
Polymers

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Dodabalapur, A., Woo, B., Jeong, Y. T., Faccetti, A., Marks, T. J., Rotzoll, R., ... Jung, T. (2005). Organic transistors: Improved performance and fast response. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2005, pp. 851). [1548275] https://doi.org/10.1109/LEOS.2005.1548275

Organic transistors : Improved performance and fast response. / Dodabalapur, Ananth; Woo, Byungwook; Jeong, Yeon Taek; Faccetti, Antonio; Marks, Tobin J; Rotzoll, Robert; Mohapatra, Siddharth; Grigas, Michaile; Wenz, Robert; Dimmler, Klaus; Dunn, Larry; Wang, Liang; Jung, Taeho.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2005 2005. p. 851 1548275.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dodabalapur, A, Woo, B, Jeong, YT, Faccetti, A, Marks, TJ, Rotzoll, R, Mohapatra, S, Grigas, M, Wenz, R, Dimmler, K, Dunn, L, Wang, L & Jung, T 2005, Organic transistors: Improved performance and fast response. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 2005, 1548275, pp. 851, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 10/22/05. https://doi.org/10.1109/LEOS.2005.1548275
Dodabalapur A, Woo B, Jeong YT, Faccetti A, Marks TJ, Rotzoll R et al. Organic transistors: Improved performance and fast response. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2005. 2005. p. 851. 1548275 https://doi.org/10.1109/LEOS.2005.1548275
Dodabalapur, Ananth ; Woo, Byungwook ; Jeong, Yeon Taek ; Faccetti, Antonio ; Marks, Tobin J ; Rotzoll, Robert ; Mohapatra, Siddharth ; Grigas, Michaile ; Wenz, Robert ; Dimmler, Klaus ; Dunn, Larry ; Wang, Liang ; Jung, Taeho. / Organic transistors : Improved performance and fast response. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2005 2005. pp. 851
@inproceedings{3b5ec5511b8c4ef7a618a915c1ac01c7,
title = "Organic transistors: Improved performance and fast response",
abstract = "Organic field-effect transistors (OFETs) have been proposed for a number of applications including displays, electronic barcodes and sensors. The attractions of low cost processes, large-area circuits and the chemically active nature of organic materials are the chief driving forces to make OFETs important in various applications. FETs based on p-type semiconductors such as pentacene or oligothiophenes in which holes are the majority carriers, have received most of the attention. In contrast to the extensively studied p-type materials, the number of organic compounds with good n-type characteristics is still limited. This is an important problem since n-channel transistors are required for the fabrication of complimentary circuits. Increasing electron affinity of molecules can be achieved by introduction of electron-withdrawing functional groups and the Marks group has successfully synthesized families of carbonyl-substituted oligothiophenes (DFHCO-4T and others) which have achieved high electron mobilities. We describe techniques to form small channel length (4 μm) bottom-contact transistors that will be useful for a number of applications including complementary logic circuits and display drivers. It is very important to pay attention to the details of surface preparation and the interface between the contact metal and the organic semiconductor [1]. The transient response of organic transistors is crucially important in determining the speeds of circuits. One important technical hurdle that has to be overcome for using organic transistors in RFID tags is for these devices to operate at RF frequencies (typically 13.56 MHz) in the front end. It was long thought that organic transistors are too slow for this. In recent work [2], we have shown that organic transistor based full-wave rectifier circuits utilizing pentacene, a p-channel organic semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the non-quasi static (NQS) state of the transistors. We will review the transport phenomena in pentacane transistors and present a model of how fast rectifier circuits will work. Finally, the characteristics of nanoscale organic and polymer transistors are discussed. At small geometries, contacts play an increasingly dominant role.",
author = "Ananth Dodabalapur and Byungwook Woo and Jeong, {Yeon Taek} and Antonio Faccetti and Marks, {Tobin J} and Robert Rotzoll and Siddharth Mohapatra and Michaile Grigas and Robert Wenz and Klaus Dimmler and Larry Dunn and Liang Wang and Taeho Jung",
year = "2005",
doi = "10.1109/LEOS.2005.1548275",
language = "English",
isbn = "0780392175",
volume = "2005",
pages = "851",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - Organic transistors

T2 - Improved performance and fast response

AU - Dodabalapur, Ananth

AU - Woo, Byungwook

AU - Jeong, Yeon Taek

AU - Faccetti, Antonio

AU - Marks, Tobin J

AU - Rotzoll, Robert

AU - Mohapatra, Siddharth

AU - Grigas, Michaile

AU - Wenz, Robert

AU - Dimmler, Klaus

AU - Dunn, Larry

AU - Wang, Liang

AU - Jung, Taeho

PY - 2005

Y1 - 2005

N2 - Organic field-effect transistors (OFETs) have been proposed for a number of applications including displays, electronic barcodes and sensors. The attractions of low cost processes, large-area circuits and the chemically active nature of organic materials are the chief driving forces to make OFETs important in various applications. FETs based on p-type semiconductors such as pentacene or oligothiophenes in which holes are the majority carriers, have received most of the attention. In contrast to the extensively studied p-type materials, the number of organic compounds with good n-type characteristics is still limited. This is an important problem since n-channel transistors are required for the fabrication of complimentary circuits. Increasing electron affinity of molecules can be achieved by introduction of electron-withdrawing functional groups and the Marks group has successfully synthesized families of carbonyl-substituted oligothiophenes (DFHCO-4T and others) which have achieved high electron mobilities. We describe techniques to form small channel length (4 μm) bottom-contact transistors that will be useful for a number of applications including complementary logic circuits and display drivers. It is very important to pay attention to the details of surface preparation and the interface between the contact metal and the organic semiconductor [1]. The transient response of organic transistors is crucially important in determining the speeds of circuits. One important technical hurdle that has to be overcome for using organic transistors in RFID tags is for these devices to operate at RF frequencies (typically 13.56 MHz) in the front end. It was long thought that organic transistors are too slow for this. In recent work [2], we have shown that organic transistor based full-wave rectifier circuits utilizing pentacene, a p-channel organic semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the non-quasi static (NQS) state of the transistors. We will review the transport phenomena in pentacane transistors and present a model of how fast rectifier circuits will work. Finally, the characteristics of nanoscale organic and polymer transistors are discussed. At small geometries, contacts play an increasingly dominant role.

AB - Organic field-effect transistors (OFETs) have been proposed for a number of applications including displays, electronic barcodes and sensors. The attractions of low cost processes, large-area circuits and the chemically active nature of organic materials are the chief driving forces to make OFETs important in various applications. FETs based on p-type semiconductors such as pentacene or oligothiophenes in which holes are the majority carriers, have received most of the attention. In contrast to the extensively studied p-type materials, the number of organic compounds with good n-type characteristics is still limited. This is an important problem since n-channel transistors are required for the fabrication of complimentary circuits. Increasing electron affinity of molecules can be achieved by introduction of electron-withdrawing functional groups and the Marks group has successfully synthesized families of carbonyl-substituted oligothiophenes (DFHCO-4T and others) which have achieved high electron mobilities. We describe techniques to form small channel length (4 μm) bottom-contact transistors that will be useful for a number of applications including complementary logic circuits and display drivers. It is very important to pay attention to the details of surface preparation and the interface between the contact metal and the organic semiconductor [1]. The transient response of organic transistors is crucially important in determining the speeds of circuits. One important technical hurdle that has to be overcome for using organic transistors in RFID tags is for these devices to operate at RF frequencies (typically 13.56 MHz) in the front end. It was long thought that organic transistors are too slow for this. In recent work [2], we have shown that organic transistor based full-wave rectifier circuits utilizing pentacene, a p-channel organic semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the non-quasi static (NQS) state of the transistors. We will review the transport phenomena in pentacane transistors and present a model of how fast rectifier circuits will work. Finally, the characteristics of nanoscale organic and polymer transistors are discussed. At small geometries, contacts play an increasingly dominant role.

UR - http://www.scopus.com/inward/record.url?scp=33751329019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751329019&partnerID=8YFLogxK

U2 - 10.1109/LEOS.2005.1548275

DO - 10.1109/LEOS.2005.1548275

M3 - Conference contribution

AN - SCOPUS:33751329019

SN - 0780392175

SN - 9780780392175

VL - 2005

SP - 851

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -