Abstract
Films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate) 2, and Ca(dipivaloylmethanate)2, and triphenylbismuth. Deposition is carried out at 2 Torr with argon as the carrier gas and oxygen and water vapor as reactants. Film growth rates of 2-3 μm/h are achieved. After annealing under oxygen, energy dispersive x-ray analysis and x-ray diffraction data reveal that such films on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox, T c=85 K, phase and have preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of film superconductivity at ∼110 K and zero resistance by 75 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1166-1168 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1989 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Organometallic chemical vapor deposition of high Tc superconducting Bi-Sr-Ca-Cu-O films. / Zhang, Jiming; Zhao, Jing; Marcy, Henry O.; Tonge, Lauren M.; Wessels, Bruce W.; Marks, Tobin J; Kannewurf, Carl R.
In: Applied Physics Letters, Vol. 54, No. 12, 1989, p. 1166-1168.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organometallic chemical vapor deposition of high Tc superconducting Bi-Sr-Ca-Cu-O films
AU - Zhang, Jiming
AU - Zhao, Jing
AU - Marcy, Henry O.
AU - Tonge, Lauren M.
AU - Wessels, Bruce W.
AU - Marks, Tobin J
AU - Kannewurf, Carl R.
PY - 1989
Y1 - 1989
N2 - Films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate) 2, and Ca(dipivaloylmethanate)2, and triphenylbismuth. Deposition is carried out at 2 Torr with argon as the carrier gas and oxygen and water vapor as reactants. Film growth rates of 2-3 μm/h are achieved. After annealing under oxygen, energy dispersive x-ray analysis and x-ray diffraction data reveal that such films on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox, T c=85 K, phase and have preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of film superconductivity at ∼110 K and zero resistance by 75 K.
AB - Films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate) 2, and Ca(dipivaloylmethanate)2, and triphenylbismuth. Deposition is carried out at 2 Torr with argon as the carrier gas and oxygen and water vapor as reactants. Film growth rates of 2-3 μm/h are achieved. After annealing under oxygen, energy dispersive x-ray analysis and x-ray diffraction data reveal that such films on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox, T c=85 K, phase and have preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of film superconductivity at ∼110 K and zero resistance by 75 K.
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U2 - 10.1063/1.101481
DO - 10.1063/1.101481
M3 - Article
AN - SCOPUS:0040542572
VL - 54
SP - 1166
EP - 1168
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
ER -