Organometallic chemical vapor deposition of strontium titanate

W. A. Feil; B. W. Wessels; L. M. Tonge; Tobin J Marks

doi:10.1063/1.345034

Organometallic chemical vapor deposition of strontium titanate

W. A. Feil, B. W. Wessels, L. M. Tonge, Tobin J Marks

Northwestern University

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52 Citations (Scopus)

Abstract

SrTiO₃ thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) ₂, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO₃ films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

Original language	English
Pages (from-to)	3858-3861
Number of pages	4
Journal	Journal of Applied Physics
Volume	67
Issue number	8
DOIs	https://doi.org/10.1063/1.345034
Publication status	Published - 1990

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Feil, W. A., Wessels, B. W., Tonge, L. M., & Marks, T. J. (1990). Organometallic chemical vapor deposition of strontium titanate. Journal of Applied Physics, 67(8), 3858-3861. https://doi.org/10.1063/1.345034

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abstract = "SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.",

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AB - SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

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10.1063/1.345034