Abstract
SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
| Original language | English |
|---|---|
| Pages (from-to) | 3858-3861 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 67 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1990 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Organometallic chemical vapor deposition of strontium titanate. / Feil, W. A.; Wessels, B. W.; Tonge, L. M.; Marks, Tobin J.
In: Journal of Applied Physics, Vol. 67, No. 8, 1990, p. 3858-3861.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organometallic chemical vapor deposition of strontium titanate
AU - Feil, W. A.
AU - Wessels, B. W.
AU - Tonge, L. M.
AU - Marks, Tobin J
PY - 1990
Y1 - 1990
N2 - SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
AB - SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
UR - http://www.scopus.com/inward/record.url?scp=0000927292&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000927292&partnerID=8YFLogxK
U2 - 10.1063/1.345034
DO - 10.1063/1.345034
M3 - Article
VL - 67
SP - 3858
EP - 3861
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
ER -