Abstract
SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
| Original language | English |
|---|---|
| Pages (from-to) | 3858-3861 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 67 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Dec 1 1990 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Feil, W. A., Wessels, B. W., Tonge, L. M., & Marks, T. J. (1990). Organometallic chemical vapor deposition of strontium titanate. Journal of Applied Physics, 67(8), 3858-3861. https://doi.org/10.1063/1.345034