Organometallic chemical vapor deposition of strontium titanate

W. A. Feil, B. W. Wessels, L. M. Tonge, T. J. Marks

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

Original languageEnglish
Pages (from-to)3858-3861
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number8
DOIs
Publication statusPublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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