Organometallic chemical vapor deposition of strontium titanate

W. A. Feil; B. W. Wessels; L. M. Tonge; T. J. Marks

doi:10.1063/1.345034

Organometallic chemical vapor deposition of strontium titanate

W. A. Feil, B. W. Wessels, L. M. Tonge, T. J. Marks

Northwestern University

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

SrTiO₃ thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) ₂, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO₃ films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

Original language	English
Pages (from-to)	3858-3861
Number of pages	4
Journal	Journal of Applied Physics
Volume	67
Issue number	8
DOIs	https://doi.org/10.1063/1.345034
Publication status	Published - Dec 1 1990

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Organometallic chemical vapor deposition of strontium titanate",

abstract = "SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.",

author = "Feil, {W. A.} and Wessels, {B. W.} and Tonge, {L. M.} and Marks, {T. J.}",

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AU - Feil, W. A.

AU - Wessels, B. W.

AU - Tonge, L. M.

AU - Marks, T. J.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

AB - SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

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