Organometallic chemical vapor deposition of strontium titanate

W. A. Feil, B. W. Wessels, L. M. Tonge, Tobin J Marks

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate) 2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600-850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

Original languageEnglish
Pages (from-to)3858-3861
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number8
DOIs
Publication statusPublished - 1990

Fingerprint

strontium
vapor deposition
thin films
water vapor
sapphire
textures
low pressure
titanium
argon
oxygen
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Organometallic chemical vapor deposition of strontium titanate. / Feil, W. A.; Wessels, B. W.; Tonge, L. M.; Marks, Tobin J.

In: Journal of Applied Physics, Vol. 67, No. 8, 1990, p. 3858-3861.

Research output: Contribution to journalArticle

Feil, W. A. ; Wessels, B. W. ; Tonge, L. M. ; Marks, Tobin J. / Organometallic chemical vapor deposition of strontium titanate. In: Journal of Applied Physics. 1990 ; Vol. 67, No. 8. pp. 3858-3861.
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