Orientation and structure dependence of interface magnetocrystalline anisotropy of Co/Cu overlayers and superlattices

Lieping Zhong, Miyoung Kim, Xindong Wang, Dingsheng Wang, Arthur J Freeman

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Abstract

The full potential linearized augmented plane wave method and atomic force approach are employed for the theoretical determination of interface magnetocrystalline anisotropy (MCA) for superlattice systems of Co/Cu in (001), (110), and (111) orientations, and overlayer systems of the monolayer Co on Cu (111) substrate adsorbed by different further coverage of Cu. It is found in superlattices that the interface MCA is sensitive to the geometry arising from different orientations. In good agreement with experiment, the interface MCA with Cu overlayers is found to peak at 1 monolayer of Cu-coated Co/Cu(111) and then to decrease with further Cu deposition. In addition to the hybridization of electronic states at the Co/Cu interface, the interaction between the interface layers and the next-to-interface layers in superlattices and structure relaxation in overlayers may have a significant influence on the MCA of the Co layer.

Original languageEnglish
Pages (from-to)5831-5833
Number of pages3
JournalJournal of Applied Physics
Volume79
Issue number8 PART 2B
Publication statusPublished - Apr 15 1996

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superlattices
anisotropy
plane waves
geometry
electronics
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Orientation and structure dependence of interface magnetocrystalline anisotropy of Co/Cu overlayers and superlattices. / Zhong, Lieping; Kim, Miyoung; Wang, Xindong; Wang, Dingsheng; Freeman, Arthur J.

In: Journal of Applied Physics, Vol. 79, No. 8 PART 2B, 15.04.1996, p. 5831-5833.

Research output: Contribution to journalArticle

Zhong, Lieping ; Kim, Miyoung ; Wang, Xindong ; Wang, Dingsheng ; Freeman, Arthur J. / Orientation and structure dependence of interface magnetocrystalline anisotropy of Co/Cu overlayers and superlattices. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 8 PART 2B. pp. 5831-5833.
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