Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation

X. K. Wang, K. C. Sheng, S. J. Lee, Y. H. Shen, S. N. Song, D. X. Li, Robert P. H. Chang, J. B. Ketterson

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Abstract

Thin films of YBaCu(F)O were deposited on SrTiO3(100) substrates by multilayer deposition from three electron guns containing Y, BaF 2, and Cu under a pressure of 5×10-5 Torr of O2. The films were later annealed in a separate chamber under a flowing O2-H2O atmosphere. X-ray diffraction studies reveal that the resulting structure is highly oriented with the a axis perpendicular to the substrate. Scanning electron micrographs show a morphology consisting of an array of orthogonal, interconnecting bars with well-developed junctions. High-resolution electron microscopy and electron diffraction patterns show that these junctions are atomically abrupt and that the associated c axes are mutually perpendicular. These epitaxial films show a sharp resistive transition with Tc(R=0) as high as 90 K. The zero field critical current density, determined from magnetization measurements, is 2.9×106 A/cm2 at 4.2 K and 5.0×104 A/cm2 at 77 K.

Original languageEnglish
Pages (from-to)1573-1575
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number16
DOIs
Publication statusPublished - 1989

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evaporation
electron beams
electron guns
thin films
diffraction
critical current
electron microscopy
diffraction patterns
electron diffraction
chambers
current density
atmospheres
magnetization
scanning
high resolution
electrons
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, X. K., Sheng, K. C., Lee, S. J., Shen, Y. H., Song, S. N., Li, D. X., ... Ketterson, J. B. (1989). Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation. Applied Physics Letters, 54(16), 1573-1575. https://doi.org/10.1063/1.101317

Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation. / Wang, X. K.; Sheng, K. C.; Lee, S. J.; Shen, Y. H.; Song, S. N.; Li, D. X.; Chang, Robert P. H.; Ketterson, J. B.

In: Applied Physics Letters, Vol. 54, No. 16, 1989, p. 1573-1575.

Research output: Contribution to journalArticle

Wang, XK, Sheng, KC, Lee, SJ, Shen, YH, Song, SN, Li, DX, Chang, RPH & Ketterson, JB 1989, 'Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation', Applied Physics Letters, vol. 54, no. 16, pp. 1573-1575. https://doi.org/10.1063/1.101317
Wang, X. K. ; Sheng, K. C. ; Lee, S. J. ; Shen, Y. H. ; Song, S. N. ; Li, D. X. ; Chang, Robert P. H. ; Ketterson, J. B. / Oriented thin films of YBaCu(F)O with high Tc and Jc prepared by electron beam multilayer evaporation. In: Applied Physics Letters. 1989 ; Vol. 54, No. 16. pp. 1573-1575.
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AU - Wang, X. K.

AU - Sheng, K. C.

AU - Lee, S. J.

AU - Shen, Y. H.

AU - Song, S. N.

AU - Li, D. X.

AU - Chang, Robert P. H.

AU - Ketterson, J. B.

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N2 - Thin films of YBaCu(F)O were deposited on SrTiO3(100) substrates by multilayer deposition from three electron guns containing Y, BaF 2, and Cu under a pressure of 5×10-5 Torr of O2. The films were later annealed in a separate chamber under a flowing O2-H2O atmosphere. X-ray diffraction studies reveal that the resulting structure is highly oriented with the a axis perpendicular to the substrate. Scanning electron micrographs show a morphology consisting of an array of orthogonal, interconnecting bars with well-developed junctions. High-resolution electron microscopy and electron diffraction patterns show that these junctions are atomically abrupt and that the associated c axes are mutually perpendicular. These epitaxial films show a sharp resistive transition with Tc(R=0) as high as 90 K. The zero field critical current density, determined from magnetization measurements, is 2.9×106 A/cm2 at 4.2 K and 5.0×104 A/cm2 at 77 K.

AB - Thin films of YBaCu(F)O were deposited on SrTiO3(100) substrates by multilayer deposition from three electron guns containing Y, BaF 2, and Cu under a pressure of 5×10-5 Torr of O2. The films were later annealed in a separate chamber under a flowing O2-H2O atmosphere. X-ray diffraction studies reveal that the resulting structure is highly oriented with the a axis perpendicular to the substrate. Scanning electron micrographs show a morphology consisting of an array of orthogonal, interconnecting bars with well-developed junctions. High-resolution electron microscopy and electron diffraction patterns show that these junctions are atomically abrupt and that the associated c axes are mutually perpendicular. These epitaxial films show a sharp resistive transition with Tc(R=0) as high as 90 K. The zero field critical current density, determined from magnetization measurements, is 2.9×106 A/cm2 at 4.2 K and 5.0×104 A/cm2 at 77 K.

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