Origin of the bias stress instability in single-crystal organic field-effect transistors

B. Lee, A. Wan, D. Mastrogiovanni, J. E. Anthony, Eric Garfunkel, V. Podzorov

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.

Original languageEnglish
Article number085302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number8
DOIs
Publication statusPublished - Aug 3 2010

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Organic field effect transistors
field effect transistors
Single crystals
Semiconductor materials
single crystals
insulators
Ultraviolet photoelectron spectroscopy
ultraviolet spectroscopy
test stands
Ground state
Charge transfer
charge transfer
photoelectron spectroscopy
ground state

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Origin of the bias stress instability in single-crystal organic field-effect transistors. / Lee, B.; Wan, A.; Mastrogiovanni, D.; Anthony, J. E.; Garfunkel, Eric; Podzorov, V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 8, 085302, 03.08.2010.

Research output: Contribution to journalArticle

@article{63c19ae2029e43ccae50b35e05b01e98,
title = "Origin of the bias stress instability in single-crystal organic field-effect transistors",
abstract = "We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.",
author = "B. Lee and A. Wan and D. Mastrogiovanni and Anthony, {J. E.} and Eric Garfunkel and V. Podzorov",
year = "2010",
month = "8",
day = "3",
doi = "10.1103/PhysRevB.82.085302",
language = "English",
volume = "82",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

TY - JOUR

T1 - Origin of the bias stress instability in single-crystal organic field-effect transistors

AU - Lee, B.

AU - Wan, A.

AU - Mastrogiovanni, D.

AU - Anthony, J. E.

AU - Garfunkel, Eric

AU - Podzorov, V.

PY - 2010/8/3

Y1 - 2010/8/3

N2 - We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.

AB - We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.

UR - http://www.scopus.com/inward/record.url?scp=77957557366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957557366&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.82.085302

DO - 10.1103/PhysRevB.82.085302

M3 - Article

AN - SCOPUS:77957557366

VL - 82

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

M1 - 085302

ER -