Origin of the bias stress instability in single-crystal organic field-effect transistors

B. Lee, A. Wan, D. Mastrogiovanni, J. E. Anthony, E. Garfunkel, V. Podzorov

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Abstract

We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.

Original languageEnglish
Article number085302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number8
DOIs
Publication statusPublished - Aug 3 2010

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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