Overlayer energetics from thermal desorption on Si

M. Zinke-Allmang, Leonard C Feldman

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


We demonstrate that isothermal desorption measurements of film/substrate systems yield characteristic energies which allow for a closer insight into the thermodynamical driving forces which determine the thin film morphology. Comparison of the activation energy for desorption for the strongly interacting Sn-Si system and weakly interacting Ga-Si system is used to explain the growth mode for each of these cases. The preexponential factors in the measured desorption rates are discussed in terms of the entropy contributions for the process.

Original languageEnglish
JournalSurface Science Letters
Issue number1-2
Publication statusPublished - Nov 1 1987

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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