Overlayer energetics from thermal desorption on Si

M. Zinke-Allmang, Leonard C Feldman

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We demonstrate that isothermal desorption measurements of film/substrate systems yield characteristic energies which allow for a closer insight into the thermodynamical driving forces which determine the thin film morphology. Comparison of the activation energy for desorption for the strongly interacting Sn-Si system and weakly interacting Ga-Si system is used to explain the growth mode for each of these cases. The preexponential factors in the measured desorption rates are discussed in terms of the entropy contributions for the process.

Original languageEnglish
JournalSurface Science Letters
Volume191
Issue number1-2
DOIs
Publication statusPublished - Nov 1 1987

Fingerprint

Thermal desorption
Desorption
desorption
Entropy
Activation energy
entropy
activation energy
Thin films
Substrates
thin films
energy

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Overlayer energetics from thermal desorption on Si. / Zinke-Allmang, M.; Feldman, Leonard C.

In: Surface Science Letters, Vol. 191, No. 1-2, 01.11.1987.

Research output: Contribution to journalArticle

@article{2b1b2d97d88542abaaad8e5fa4435081,
title = "Overlayer energetics from thermal desorption on Si",
abstract = "We demonstrate that isothermal desorption measurements of film/substrate systems yield characteristic energies which allow for a closer insight into the thermodynamical driving forces which determine the thin film morphology. Comparison of the activation energy for desorption for the strongly interacting Sn-Si system and weakly interacting Ga-Si system is used to explain the growth mode for each of these cases. The preexponential factors in the measured desorption rates are discussed in terms of the entropy contributions for the process.",
author = "M. Zinke-Allmang and Feldman, {Leonard C}",
year = "1987",
month = "11",
day = "1",
doi = "10.1016/0167-2584(87)90885-1",
language = "English",
volume = "191",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Overlayer energetics from thermal desorption on Si

AU - Zinke-Allmang, M.

AU - Feldman, Leonard C

PY - 1987/11/1

Y1 - 1987/11/1

N2 - We demonstrate that isothermal desorption measurements of film/substrate systems yield characteristic energies which allow for a closer insight into the thermodynamical driving forces which determine the thin film morphology. Comparison of the activation energy for desorption for the strongly interacting Sn-Si system and weakly interacting Ga-Si system is used to explain the growth mode for each of these cases. The preexponential factors in the measured desorption rates are discussed in terms of the entropy contributions for the process.

AB - We demonstrate that isothermal desorption measurements of film/substrate systems yield characteristic energies which allow for a closer insight into the thermodynamical driving forces which determine the thin film morphology. Comparison of the activation energy for desorption for the strongly interacting Sn-Si system and weakly interacting Ga-Si system is used to explain the growth mode for each of these cases. The preexponential factors in the measured desorption rates are discussed in terms of the entropy contributions for the process.

UR - http://www.scopus.com/inward/record.url?scp=2842563973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2842563973&partnerID=8YFLogxK

U2 - 10.1016/0167-2584(87)90885-1

DO - 10.1016/0167-2584(87)90885-1

M3 - Article

VL - 191

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -