Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

X. Zhang, Y. J. Chabal, S. B. Christman, E. E. Chaban, Eric Garfunkel

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.

Original languageEnglish
Pages (from-to)1725-1729
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number4
DOIs
Publication statusPublished - Jan 1 2001

    Fingerprint

Keywords

  • Si

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this