Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

X. Zhang, Y. J. Chabal, S. B. Christman, E. E. Chaban, E. Garfunkel

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.

Original languageEnglish
Pages (from-to)1725-1729
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - Jul 2001


  • Si

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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