The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - Jan 1 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films