Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

X. Zhang, Y. J. Chabal, S. B. Christman, E. E. Chaban, Eric Garfunkel

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.

Original languageEnglish
Pages (from-to)1725-1729
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number4
DOIs
Publication statusPublished - Jan 1 2001

Fingerprint

Oxidation
oxidation
oxygen
Oxygen
infrared absorption
flat surfaces
absorption spectroscopy
infrared spectroscopy
Infrared absorption
Silicon
Absorption spectroscopy
vibration
Hydrogen
Infrared spectroscopy
silicon
hydrogen
molecules
Molecules
Monitoring

Keywords

  • Si

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces. / Zhang, X.; Chabal, Y. J.; Christman, S. B.; Chaban, E. E.; Garfunkel, Eric.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 19, No. 4, 01.01.2001, p. 1725-1729.

Research output: Contribution to journalArticle

Zhang, X. ; Chabal, Y. J. ; Christman, S. B. ; Chaban, E. E. ; Garfunkel, Eric. / Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2001 ; Vol. 19, No. 4. pp. 1725-1729.
@article{501a35a940ec4f9e9472e90a01b60dab,
title = "Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces",
abstract = "The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.",
keywords = "Si",
author = "X. Zhang and Chabal, {Y. J.} and Christman, {S. B.} and Chaban, {E. E.} and Eric Garfunkel",
year = "2001",
month = "1",
day = "1",
doi = "10.1116/1.1335680",
language = "English",
volume = "19",
pages = "1725--1729",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

AU - Zhang, X.

AU - Chabal, Y. J.

AU - Christman, S. B.

AU - Chaban, E. E.

AU - Garfunkel, Eric

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.

AB - The initial stages of [formula omitted] oxidation of H-passivated flat and vicinal Si(111) surfaces are investigated by monitoring the Si–H stretch vibrations with infrared absorption spectroscopy. We find that the incorporation of oxygen into silicon is activated (1.66±0.10 eV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si–Si bonds without removing surface hydrogen and this process is facilitated at steps.

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=84978436442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978436442&partnerID=8YFLogxK

U2 - 10.1116/1.1335680

DO - 10.1116/1.1335680

M3 - Article

VL - 19

SP - 1725

EP - 1729

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

ER -