Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer

Xinan Zhang, Binghao Wang, Wei Huang, Gang Wang, Weigang Zhu, Zhi Wang, Weifeng Zhang, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Organic semiconductor-insulator blend films are widely explored for high-performance electronic devices enabled by unique phase-separation and self-assembly phenomena at key device interfaces. Here we report the first demonstration of high-performance hybrid diodes based on p-n junctions formed by a p-type poly(3-hexylthiophene) (P3HT)-poly(methyl methacrylate) (PMMA) blend and n-type indium-gallium-zinc oxide (IGZO). The thin film morphology, microstructure, and vertical phase-separation behavior of the P3HT films with varying contents of PMMA are systematically analyzed. Microstructural and charge transport evaluation indicates that the polymer insulator component positively impacts the morphology, molecular orientation, and effective conjugation length of the P3HT films, thereby enhancing the heterojunction performance. Furthermore, the data suggest that PMMA phase segregation creates a continuous nanoscopic interlayer between the P3HT and IGZO layers, playing an important role in enhancing diode performance. Thus, the diode based on an optimal P3HT-PMMA blend exhibits a remarkable 10-fold increase in forward current versus that of a neat P3HT diode, yielding an ideality factor value as low as 2.5, and a moderate effective barrier height with an excellent rectification ratio. These results offer a new approach to simplified manufacturing of low-cost, large-area hybrid inorganic-organic electronics technologies.

Original languageEnglish
JournalNano Letters
DOIs
Publication statusAccepted/In press - Jan 1 2018

Fingerprint

Polymethyl methacrylates
polymethyl methacrylate
Oxides
Heterojunctions
heterojunctions
Polymers
Diodes
diodes
Polymethyl Methacrylate
gallium oxides
oxides
polymers
Gallium
Zinc oxide
Phase separation
zinc oxides
Indium
Zinc Oxide
indium
insulators

Keywords

  • effective barrier height
  • hybrid diode
  • ideality factor
  • IGZO
  • Organic semiconductor-insulator blend
  • P3HT

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer. / Zhang, Xinan; Wang, Binghao; Huang, Wei; Wang, Gang; Zhu, Weigang; Wang, Zhi; Zhang, Weifeng; Facchetti, Antonio; Marks, Tobin J.

In: Nano Letters, 01.01.2018.

Research output: Contribution to journalArticle

Zhang, Xinan ; Wang, Binghao ; Huang, Wei ; Wang, Gang ; Zhu, Weigang ; Wang, Zhi ; Zhang, Weifeng ; Facchetti, Antonio ; Marks, Tobin J. / Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer. In: Nano Letters. 2018.
@article{b06212fc09744e649e4b133ac5d16204,
title = "Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer",
abstract = "Organic semiconductor-insulator blend films are widely explored for high-performance electronic devices enabled by unique phase-separation and self-assembly phenomena at key device interfaces. Here we report the first demonstration of high-performance hybrid diodes based on p-n junctions formed by a p-type poly(3-hexylthiophene) (P3HT)-poly(methyl methacrylate) (PMMA) blend and n-type indium-gallium-zinc oxide (IGZO). The thin film morphology, microstructure, and vertical phase-separation behavior of the P3HT films with varying contents of PMMA are systematically analyzed. Microstructural and charge transport evaluation indicates that the polymer insulator component positively impacts the morphology, molecular orientation, and effective conjugation length of the P3HT films, thereby enhancing the heterojunction performance. Furthermore, the data suggest that PMMA phase segregation creates a continuous nanoscopic interlayer between the P3HT and IGZO layers, playing an important role in enhancing diode performance. Thus, the diode based on an optimal P3HT-PMMA blend exhibits a remarkable 10-fold increase in forward current versus that of a neat P3HT diode, yielding an ideality factor value as low as 2.5, and a moderate effective barrier height with an excellent rectification ratio. These results offer a new approach to simplified manufacturing of low-cost, large-area hybrid inorganic-organic electronics technologies.",
keywords = "effective barrier height, hybrid diode, ideality factor, IGZO, Organic semiconductor-insulator blend, P3HT",
author = "Xinan Zhang and Binghao Wang and Wei Huang and Gang Wang and Weigang Zhu and Zhi Wang and Weifeng Zhang and Antonio Facchetti and Marks, {Tobin J}",
year = "2018",
month = "1",
day = "1",
doi = "10.1021/acs.nanolett.8b04284",
language = "English",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",

}

TY - JOUR

T1 - Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer

AU - Zhang, Xinan

AU - Wang, Binghao

AU - Huang, Wei

AU - Wang, Gang

AU - Zhu, Weigang

AU - Wang, Zhi

AU - Zhang, Weifeng

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Organic semiconductor-insulator blend films are widely explored for high-performance electronic devices enabled by unique phase-separation and self-assembly phenomena at key device interfaces. Here we report the first demonstration of high-performance hybrid diodes based on p-n junctions formed by a p-type poly(3-hexylthiophene) (P3HT)-poly(methyl methacrylate) (PMMA) blend and n-type indium-gallium-zinc oxide (IGZO). The thin film morphology, microstructure, and vertical phase-separation behavior of the P3HT films with varying contents of PMMA are systematically analyzed. Microstructural and charge transport evaluation indicates that the polymer insulator component positively impacts the morphology, molecular orientation, and effective conjugation length of the P3HT films, thereby enhancing the heterojunction performance. Furthermore, the data suggest that PMMA phase segregation creates a continuous nanoscopic interlayer between the P3HT and IGZO layers, playing an important role in enhancing diode performance. Thus, the diode based on an optimal P3HT-PMMA blend exhibits a remarkable 10-fold increase in forward current versus that of a neat P3HT diode, yielding an ideality factor value as low as 2.5, and a moderate effective barrier height with an excellent rectification ratio. These results offer a new approach to simplified manufacturing of low-cost, large-area hybrid inorganic-organic electronics technologies.

AB - Organic semiconductor-insulator blend films are widely explored for high-performance electronic devices enabled by unique phase-separation and self-assembly phenomena at key device interfaces. Here we report the first demonstration of high-performance hybrid diodes based on p-n junctions formed by a p-type poly(3-hexylthiophene) (P3HT)-poly(methyl methacrylate) (PMMA) blend and n-type indium-gallium-zinc oxide (IGZO). The thin film morphology, microstructure, and vertical phase-separation behavior of the P3HT films with varying contents of PMMA are systematically analyzed. Microstructural and charge transport evaluation indicates that the polymer insulator component positively impacts the morphology, molecular orientation, and effective conjugation length of the P3HT films, thereby enhancing the heterojunction performance. Furthermore, the data suggest that PMMA phase segregation creates a continuous nanoscopic interlayer between the P3HT and IGZO layers, playing an important role in enhancing diode performance. Thus, the diode based on an optimal P3HT-PMMA blend exhibits a remarkable 10-fold increase in forward current versus that of a neat P3HT diode, yielding an ideality factor value as low as 2.5, and a moderate effective barrier height with an excellent rectification ratio. These results offer a new approach to simplified manufacturing of low-cost, large-area hybrid inorganic-organic electronics technologies.

KW - effective barrier height

KW - hybrid diode

KW - ideality factor

KW - IGZO

KW - Organic semiconductor-insulator blend

KW - P3HT

UR - http://www.scopus.com/inward/record.url?scp=85058567197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058567197&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b04284

DO - 10.1021/acs.nanolett.8b04284

M3 - Article

C2 - 30517010

AN - SCOPUS:85058567197

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -