Oxide Transistors

Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang, Li Zeng, Xinge Yu, Peijun Guo, Binghao Wang, Qing Ma, Robert P. H. Chang, Junsheng Yu, Michael J. Bedzyk, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journal › Comment/debate

Original languageEnglish
Pages (from-to)6320
Number of pages1
JournalAdvanced Functional Materials
Volume26
Issue number34
DOIs
Publication statusPublished - Sep 13 2016

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Polyethyleneimine
Oxides
Oxide films
Charge transfer
Transistors
Metals
Doping (additives)
Microstructure
indium oxide

Keywords

  • indium oxide
  • oxide film
  • oxide transistor
  • polyethylenimine

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). / Huang, Wei; Zeng, Li; Yu, Xinge; Guo, Peijun; Wang, Binghao; Ma, Qing; Chang, Robert P. H.; Yu, Junsheng; Bedzyk, Michael J.; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Functional Materials, Vol. 26, No. 34, 13.09.2016, p. 6320.

Research output: Contribution to journal › Comment/debate

Huang, W, Zeng, L, Yu, X, Guo, P, Wang, B, Ma, Q, Chang, RPH, Yu, J, Bedzyk, MJ, Marks, TJ & Facchetti, A 2016, 'Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)', Advanced Functional Materials, vol. 26, no. 34, pp. 6320. https://doi.org/10.1002/adfm.201670223
Huang W, Zeng L, Yu X, Guo P, Wang B, Ma Q et al. Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). Advanced Functional Materials. 2016 Sep 13;26(34):6320. https://doi.org/10.1002/adfm.201670223
Huang, Wei ; Zeng, Li ; Yu, Xinge ; Guo, Peijun ; Wang, Binghao ; Ma, Qing ; Chang, Robert P. H. ; Yu, Junsheng ; Bedzyk, Michael J. ; Marks, Tobin J ; Facchetti, Antonio. / Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). In: Advanced Functional Materials. 2016 ; Vol. 26, No. 34. pp. 6320.
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AU - Huang, Wei

AU - Zeng, Li

AU - Yu, Xinge

AU - Guo, Peijun

AU - Wang, Binghao

AU - Ma, Qing

AU - Chang, Robert P. H.

AU - Yu, Junsheng

AU - Bedzyk, Michael J.

AU - Marks, Tobin J

AU - Facchetti, Antonio

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