Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang; Li Zeng; Xinge Yu; Peijun Guo; Binghao Wang; Qing Ma; Robert P. H. Chang; Junsheng Yu; Michael J. Bedzyk; Tobin J Marks; Antonio Facchetti

doi:10.1002/adfm.201670223

Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang, Li Zeng, Xinge Yu, Peijun Guo, Binghao Wang, Qing Ma, Robert P. H. Chang, Junsheng Yu, Michael J. Bedzyk, Tobin J Marks, Antonio Facchetti

Northwestern University

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	6320
Number of pages	1
Journal	Advanced Functional Materials
Volume	26
Issue number	34
DOIs	https://doi.org/10.1002/adfm.201670223
Publication status	Published - Sep 13 2016

Keywords

indium oxide
oxide film
oxide transistor
polyethylenimine

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Condensed Matter Physics
Electrochemistry

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10.1002/adfm.201670223

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Huang, W., Zeng, L., Yu, X., Guo, P., Wang, B., Ma, Q., Chang, R. P. H., Yu, J., Bedzyk, M. J., Marks, T. J., & Facchetti, A. (2016). Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). Advanced Functional Materials, 26(34), 6320. https://doi.org/10.1002/adfm.201670223

Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). / Huang, Wei; Zeng, Li; Yu, Xinge; Guo, Peijun; Wang, Binghao; Ma, Qing; Chang, Robert P. H.; Yu, Junsheng; Bedzyk, Michael J.; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Functional Materials, Vol. 26, No. 34, 13.09.2016, p. 6320.

Research output: Contribution to journal › Comment/debate › peer-review

Huang, W, Zeng, L, Yu, X, Guo, P, Wang, B, Ma, Q, Chang, RPH, Yu, J, Bedzyk, MJ, Marks, TJ & Facchetti, A 2016, 'Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)', Advanced Functional Materials, vol. 26, no. 34, pp. 6320. https://doi.org/10.1002/adfm.201670223

Huang, Wei ; Zeng, Li ; Yu, Xinge ; Guo, Peijun ; Wang, Binghao ; Ma, Qing ; Chang, Robert P. H. ; Yu, Junsheng ; Bedzyk, Michael J. ; Marks, Tobin J ; Facchetti, Antonio. / Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). In: Advanced Functional Materials. 2016 ; Vol. 26, No. 34. pp. 6320.

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author = "Wei Huang and Li Zeng and Xinge Yu and Peijun Guo and Binghao Wang and Qing Ma and Chang, {Robert P. H.} and Junsheng Yu and Bedzyk, {Michael J.} and Marks, {Tobin J} and Antonio Facchetti",

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AU - Zeng, Li

AU - Yu, Xinge

AU - Guo, Peijun

AU - Wang, Binghao

AU - Ma, Qing

AU - Chang, Robert P. H.

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AU - Bedzyk, Michael J.

AU - Marks, Tobin J

AU - Facchetti, Antonio

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Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Keywords

ASJC Scopus subject areas

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