Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang; Li Zeng; Xinge Yu; Peijun Guo; Binghao Wang; Qing Ma; Robert P. H. Chang; Junsheng Yu; Michael J. Bedzyk; Tobin J Marks; Antonio Facchetti

doi:10.1002/adfm.201670223

Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang, Li Zeng, Xinge Yu, Peijun Guo, Binghao Wang, Qing Ma, Robert P. H. Chang, Junsheng Yu, Michael J. Bedzyk, Tobin J Marks, Antonio Facchetti

Northwestern University

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	6320
Number of pages	1
Journal	Advanced Functional Materials
Volume	26
Issue number	34
DOIs	https://doi.org/10.1002/adfm.201670223
Publication status	Published - Sep 13 2016

Keywords

indium oxide
oxide film
oxide transistor
polyethylenimine

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Condensed Matter Physics
Electrochemistry

Cite this

Huang, W., Zeng, L., Yu, X., Guo, P., Wang, B., Ma, Q., Chang, R. P. H., Yu, J., Bedzyk, M. J., Marks, T. J., & Facchetti, A. (2016). Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). Advanced Functional Materials, 26(34), 6320. https://doi.org/10.1002/adfm.201670223

Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). / Huang, Wei; Zeng, Li; Yu, Xinge; Guo, Peijun; Wang, Binghao; Ma, Qing; Chang, Robert P. H.; Yu, Junsheng; Bedzyk, Michael J.; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Functional Materials, Vol. 26, No. 34, 13.09.2016, p. 6320.

Research output: Contribution to journal › Comment/debate

Huang, W, Zeng, L, Yu, X, Guo, P, Wang, B, Ma, Q, Chang, RPH, Yu, J, Bedzyk, MJ, Marks, TJ & Facchetti, A 2016, 'Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)', Advanced Functional Materials, vol. 26, no. 34, pp. 6320. https://doi.org/10.1002/adfm.201670223

Huang, Wei ; Zeng, Li ; Yu, Xinge ; Guo, Peijun ; Wang, Binghao ; Ma, Qing ; Chang, Robert P. H. ; Yu, Junsheng ; Bedzyk, Michael J. ; Marks, Tobin J ; Facchetti, Antonio. / Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). In: Advanced Functional Materials. 2016 ; Vol. 26, No. 34. pp. 6320.

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Access to Document

10.1002/adfm.201670223