Oxide Transistors

Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

Wei Huang, Li Zeng, Xinge Yu, Peijun Guo, Binghao Wang, Qing Ma, Robert P. H. Chang, Junsheng Yu, Michael J. Bedzyk, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalComment/debate

Original languageEnglish
Pages (from-to)6320
Number of pages1
JournalAdvanced Functional Materials
Volume26
Issue number34
DOIs
Publication statusPublished - Sep 13 2016

Fingerprint

Polyethyleneimine
Oxides
Oxide films
Charge transfer
Transistors
Metals
Doping (additives)
Microstructure
indium oxide

Keywords

  • indium oxide
  • oxide film
  • oxide transistor
  • polyethylenimine

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). / Huang, Wei; Zeng, Li; Yu, Xinge; Guo, Peijun; Wang, Binghao; Ma, Qing; Chang, Robert P. H.; Yu, Junsheng; Bedzyk, Michael J.; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Functional Materials, Vol. 26, No. 34, 13.09.2016, p. 6320.

Research output: Contribution to journalComment/debate

Huang, Wei ; Zeng, Li ; Yu, Xinge ; Guo, Peijun ; Wang, Binghao ; Ma, Qing ; Chang, Robert P. H. ; Yu, Junsheng ; Bedzyk, Michael J. ; Marks, Tobin J ; Facchetti, Antonio. / Oxide Transistors : Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016). In: Advanced Functional Materials. 2016 ; Vol. 26, No. 34. pp. 6320.
@article{7608dad69c8f4e94a26f96575f4dd238,
title = "Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)",
keywords = "indium oxide, oxide film, oxide transistor, polyethylenimine",
author = "Wei Huang and Li Zeng and Xinge Yu and Peijun Guo and Binghao Wang and Qing Ma and Chang, {Robert P. H.} and Junsheng Yu and Bedzyk, {Michael J.} and Marks, {Tobin J} and Antonio Facchetti",
year = "2016",
month = "9",
day = "13",
doi = "10.1002/adfm.201670223",
language = "English",
volume = "26",
pages = "6320",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "34",

}

TY - JOUR

T1 - Oxide Transistors

T2 - Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)

AU - Huang, Wei

AU - Zeng, Li

AU - Yu, Xinge

AU - Guo, Peijun

AU - Wang, Binghao

AU - Ma, Qing

AU - Chang, Robert P. H.

AU - Yu, Junsheng

AU - Bedzyk, Michael J.

AU - Marks, Tobin J

AU - Facchetti, Antonio

PY - 2016/9/13

Y1 - 2016/9/13

KW - indium oxide

KW - oxide film

KW - oxide transistor

KW - polyethylenimine

UR - http://www.scopus.com/inward/record.url?scp=84986570938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84986570938&partnerID=8YFLogxK

U2 - 10.1002/adfm.201670223

DO - 10.1002/adfm.201670223

M3 - Comment/debate

VL - 26

SP - 6320

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 34

ER -