Oxygen diffusion and reactions in Hf-based dielectrics

L. V. Goncharova, M. Dalponte, D. G. Starodub, T. Gustafsson, Eric Garfunkel, P. S. Lysaght, B. Foran, J. Barnett, G. Bersuker

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.

Original languageEnglish
Article number044108
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
Publication statusPublished - 2006

Fingerprint

hafnium oxides
oxygen
silicates
hafnium
oxygen isotopes
ion scattering
tracing
grain boundaries
atmospheres
oxidation
defects
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Goncharova, L. V., Dalponte, M., Starodub, D. G., Gustafsson, T., Garfunkel, E., Lysaght, P. S., ... Bersuker, G. (2006). Oxygen diffusion and reactions in Hf-based dielectrics. Applied Physics Letters, 89(4), [044108]. https://doi.org/10.1063/1.2221522

Oxygen diffusion and reactions in Hf-based dielectrics. / Goncharova, L. V.; Dalponte, M.; Starodub, D. G.; Gustafsson, T.; Garfunkel, Eric; Lysaght, P. S.; Foran, B.; Barnett, J.; Bersuker, G.

In: Applied Physics Letters, Vol. 89, No. 4, 044108, 2006.

Research output: Contribution to journalArticle

Goncharova, LV, Dalponte, M, Starodub, DG, Gustafsson, T, Garfunkel, E, Lysaght, PS, Foran, B, Barnett, J & Bersuker, G 2006, 'Oxygen diffusion and reactions in Hf-based dielectrics', Applied Physics Letters, vol. 89, no. 4, 044108. https://doi.org/10.1063/1.2221522
Goncharova LV, Dalponte M, Starodub DG, Gustafsson T, Garfunkel E, Lysaght PS et al. Oxygen diffusion and reactions in Hf-based dielectrics. Applied Physics Letters. 2006;89(4). 044108. https://doi.org/10.1063/1.2221522
Goncharova, L. V. ; Dalponte, M. ; Starodub, D. G. ; Gustafsson, T. ; Garfunkel, Eric ; Lysaght, P. S. ; Foran, B. ; Barnett, J. ; Bersuker, G. / Oxygen diffusion and reactions in Hf-based dielectrics. In: Applied Physics Letters. 2006 ; Vol. 89, No. 4.
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