Oxygen diffusion and reactions in Hf-based dielectrics

L. V. Goncharova, M. Dalponte, D. G. Starodub, T. Gustafsson, E. Garfunkel, P. S. Lysaght, B. Foran, J. Barnett, G. Bersuker

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Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.

Original languageEnglish
Article number044108
JournalApplied Physics Letters
Issue number4
Publication statusPublished - Aug 4 2006


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Goncharova, L. V., Dalponte, M., Starodub, D. G., Gustafsson, T., Garfunkel, E., Lysaght, P. S., Foran, B., Barnett, J., & Bersuker, G. (2006). Oxygen diffusion and reactions in Hf-based dielectrics. Applied Physics Letters, 89(4), [044108]. https://doi.org/10.1063/1.2221522