Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)