Oxygen diffusion and reactions in Hf-based dielectrics

L. V. Goncharova, M. Dalponte, D. G. Starodub, T. Gustafsson, E. Garfunkel, P. S. Lysaght, B. Foran, J. Barnett, G. Bersuker

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been investigated using medium energy ion scattering in combination with 18O 2 isotopic tracing methods. Postgrowth oxidation of Hf-based films in an 18O 2 atmosphere at 490-950°C results in O exchange in the film. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen increases with temperature and is suppressed by the SiO 2 component. Films annealed prior to oxygen isotope exposure show complex incorporation behavior, which may be attributed to grain boundary defects, and SiO 2 phase segregation.

Original languageEnglish
Article number044108
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Oxygen diffusion and reactions in Hf-based dielectrics'. Together they form a unique fingerprint.

Cite this