Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors

Jonathan W. Hennek, Jeremy Smith, Aiming Yan, Myung Gil Kim, Wei Zhao, Vinayak P. Dravid, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion ("oxygen getter"), X, functions to control O vacancies and enhance lattice formation, hence tune carrier concentration and transport properties. Here we systematically study, in the IXZO series, the role of X = Ga3+ versus the progression X = Sc 3+ → Y3+ → La3+, having similar chemical characteristics but increasing ionic radii. IXZO films are prepared from solution over broad composition ranges for the first time via low-temperature combustion synthesis. The films are characterized via thermal analysis of the precursor solutions, grazing incidence angle X-ray diffraction (GIAXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging. Excellent thin-film transistor (TFT) performance is achieved for all X, with optimal compositions after 300 C processing exhibiting electron mobilities of 5.4, 2.6, 2.4, and 1.8 cm2 V-1 s-1 for Ga3+, Sc3+, Y3+, and La 3+, respectively, and with Ion/Ioff = 10 7-108. Analysis of the IXZO TFT positive bias stress response shows X = Ga3+ to be superior with mobilities (μ) retaining >95% of the prestress values and threshold voltage shifts (ΔVT) of T ≈ 20 V for the other trivalent ions. Detailed microstructural analysis indicates that Ga3+ most effectively promotes oxide lattice formation. We conclude that the metal oxide lattice formation enthalpy (ΔHL) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.

Original languageEnglish
Pages (from-to)10729-10741
Number of pages13
JournalJournal of the American Chemical Society
Volume135
Issue number29
DOIs
Publication statusPublished - Jul 24 2013

Fingerprint

Carrier transport
Oxides
Transistors
Metals
Thin film transistors
Ions
Oxygen
Microstructure
Temperature
Zinc Oxide
Photoelectron Spectroscopy
Scanning Transmission Electron Microscopy
Semiconductors
Combustion synthesis
Indium
Atomic Force Microscopy
Electron mobility
Zinc oxide
Chemical analysis
Threshold voltage

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors. / Hennek, Jonathan W.; Smith, Jeremy; Yan, Aiming; Kim, Myung Gil; Zhao, Wei; Dravid, Vinayak P.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 135, No. 29, 24.07.2013, p. 10729-10741.

Research output: Contribution to journalArticle

Hennek, Jonathan W. ; Smith, Jeremy ; Yan, Aiming ; Kim, Myung Gil ; Zhao, Wei ; Dravid, Vinayak P. ; Facchetti, Antonio ; Marks, Tobin J. / Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors. In: Journal of the American Chemical Society. 2013 ; Vol. 135, No. 29. pp. 10729-10741.
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AU - Yan, Aiming

AU - Kim, Myung Gil

AU - Zhao, Wei

AU - Dravid, Vinayak P.

AU - Facchetti, Antonio

AU - Marks, Tobin J

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AB - In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion ("oxygen getter"), X, functions to control O vacancies and enhance lattice formation, hence tune carrier concentration and transport properties. Here we systematically study, in the IXZO series, the role of X = Ga3+ versus the progression X = Sc 3+ → Y3+ → La3+, having similar chemical characteristics but increasing ionic radii. IXZO films are prepared from solution over broad composition ranges for the first time via low-temperature combustion synthesis. The films are characterized via thermal analysis of the precursor solutions, grazing incidence angle X-ray diffraction (GIAXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging. Excellent thin-film transistor (TFT) performance is achieved for all X, with optimal compositions after 300 C processing exhibiting electron mobilities of 5.4, 2.6, 2.4, and 1.8 cm2 V-1 s-1 for Ga3+, Sc3+, Y3+, and La 3+, respectively, and with Ion/Ioff = 10 7-108. Analysis of the IXZO TFT positive bias stress response shows X = Ga3+ to be superior with mobilities (μ) retaining >95% of the prestress values and threshold voltage shifts (ΔVT) of T ≈ 20 V for the other trivalent ions. Detailed microstructural analysis indicates that Ga3+ most effectively promotes oxide lattice formation. We conclude that the metal oxide lattice formation enthalpy (ΔHL) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.

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