P-type nitrogen-doped ZnO nanoparticles stable under ambient conditions

Benoit Chavillon, Laurent Cario, Adèle Renaud, Franck Tessier, François Cheviré, Mohammed Boujtita, Yann Pellegrin, Errol Blart, Amanda Smeigh, Leif Hammarström, Fabrice Odobel, Stéphane Jobic

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89 Citations (Scopus)

Abstract

Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature of ZnO 2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions.

Original languageEnglish
Pages (from-to)464-470
Number of pages7
JournalJournal of the American Chemical Society
Volume134
Issue number1
DOIs
Publication statusPublished - Jan 11 2012

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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    Chavillon, B., Cario, L., Renaud, A., Tessier, F., Cheviré, F., Boujtita, M., Pellegrin, Y., Blart, E., Smeigh, A., Hammarström, L., Odobel, F., & Jobic, S. (2012). P-type nitrogen-doped ZnO nanoparticles stable under ambient conditions. Journal of the American Chemical Society, 134(1), 464-470. https://doi.org/10.1021/ja208044k