TY - JOUR
T1 - Partially oxidized graphene as a precursor to graphene
AU - Eda, Goki
AU - Ball, James
AU - Mattevi, Cecilia
AU - Acik, Muge
AU - Artiglia, Luca
AU - Granozzi, Gaetano
AU - Chabal, Yves
AU - Anthopoulos, Thomas D.
AU - Chhowalla, Manish
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/8/14
Y1 - 2011/8/14
N2 - Solution exfoliation of graphite holds promise for large-scale bulk synthesis of graphene. Non-covalent exfoliation is attractive because the electronic structure of graphene is preserved but the yield is low and the lateral dimensions of the sheets are small. Chemical exfoliation via formation of graphite oxide is a highly versatile and scalable route but the covalent functionalization of graphene with oxygen significantly alters the properties. Here, we report a new method for large-scale facile synthesis of micron-sized partially oxidized graphene (POG) sheets with dramatically improved electronic properties compared to other solution-phase exfoliated graphene. Due to low initial oxygen content (∼12%), POG requires only mild annealing (<300 °C) to achieve a sheet resistance of 28 kΩ sq-1 at the neutrality point, only a factor of ∼4 larger than the intrinsic sheet resistance of pristine graphene (∼6 kΩ sq-1) and substantially lower than graphene exfoliated by other methods. Such a partial oxidation approach opens up new promising routes to solution based high-performance, low temperature, transparent and conducting graphene-based flexible electronics.
AB - Solution exfoliation of graphite holds promise for large-scale bulk synthesis of graphene. Non-covalent exfoliation is attractive because the electronic structure of graphene is preserved but the yield is low and the lateral dimensions of the sheets are small. Chemical exfoliation via formation of graphite oxide is a highly versatile and scalable route but the covalent functionalization of graphene with oxygen significantly alters the properties. Here, we report a new method for large-scale facile synthesis of micron-sized partially oxidized graphene (POG) sheets with dramatically improved electronic properties compared to other solution-phase exfoliated graphene. Due to low initial oxygen content (∼12%), POG requires only mild annealing (<300 °C) to achieve a sheet resistance of 28 kΩ sq-1 at the neutrality point, only a factor of ∼4 larger than the intrinsic sheet resistance of pristine graphene (∼6 kΩ sq-1) and substantially lower than graphene exfoliated by other methods. Such a partial oxidation approach opens up new promising routes to solution based high-performance, low temperature, transparent and conducting graphene-based flexible electronics.
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U2 - 10.1039/c1jm11266j
DO - 10.1039/c1jm11266j
M3 - Article
AN - SCOPUS:79960729969
VL - 21
SP - 11217
EP - 11223
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
SN - 0959-9428
IS - 30
ER -