Passivation of deep levels at the SiO2/SiC interface

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The analysis of trapping phenomena in 4H- and 6H-SiC MOS capacitors from C-V and CCDLTS measurements is presented. Three categories of defect levels are distinguished: namely, oxide traps, semiconductor bulk traps, and interface states. NO annealing results in a dramatic decrease of the density of the interface states and the oxide traps in both polytypes, but does not reduce that of the SiC bulk traps.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages95-102
Number of pages8
Edition4
DOIs
Publication statusPublished - Dec 29 2010
EventWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: Apr 25 2010Apr 30 2010

Publication series

NameECS Transactions
Number4
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period4/25/104/30/10

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Passivation of deep levels at the SiO2/SiC interface. In Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 (4 ed., pp. 95-102). (ECS Transactions; Vol. 28, No. 4). https://doi.org/10.1149/13377105