@inproceedings{58ea44295aa043839660a7815a7733b5,
title = "Passivation of deep levels at the SiO2/SiC interface",
abstract = "The analysis of trapping phenomena in 4H- and 6H-SiC MOS capacitors from C-V and CCDLTS measurements is presented. Three categories of defect levels are distinguished: namely, oxide traps, semiconductor bulk traps, and interface states. NO annealing results in a dramatic decrease of the density of the interface states and the oxide traps in both polytypes, but does not reduce that of the SiC bulk traps.",
author = "Basile, {A. F.} and J. Rozen and Chen, {X. D.} and S. Dhar and Williams, {J. R.} and Feldman, {L. C.} and Mooney, {P. M.}",
year = "2010",
month = dec,
day = "29",
doi = "10.1149/13377105",
language = "English",
isbn = "9781566777940",
series = "ECS Transactions",
number = "4",
pages = "95--102",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "4",
note = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting ; Conference date: 25-04-2010 Through 30-04-2010",
}