Passivation of deep levels at the SiO2/SiC interface

A. F. Basile; J. Rozen; X. D. Chen; S. Dhar; J. R. Williams; L. C. Feldman; P. M. Mooney

doi:10.1149/13377105

Passivation of deep levels at the SiO₂/SiC interface

A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman, P. M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The analysis of trapping phenomena in 4H- and 6H-SiC MOS capacitors from C-V and CCDLTS measurements is presented. Three categories of defect levels are distinguished: namely, oxide traps, semiconductor bulk traps, and interface states. NO annealing results in a dramatic decrease of the density of the interface states and the oxide traps in both polytypes, but does not reduce that of the SiC bulk traps.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages	95-102
Number of pages	8
Edition	4
DOIs	https://doi.org/10.1149/13377105
Publication status	Published - Dec 29 2010
Event	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada Duration: Apr 25 2010 → Apr 30 2010

Publication series

Name	ECS Transactions
Number	4
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
Country	Canada
City	Vancouver, BC
Period	4/25/10 → 4/30/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/13377105

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Cite this

Basile, A. F., Rozen, J., Chen, X. D., Dhar, S., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Passivation of deep levels at the SiO₂/SiC interface. In Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 (4 ed., pp. 95-102). (ECS Transactions; Vol. 28, No. 4). https://doi.org/10.1149/13377105

Passivation of deep levels at the SiO₂/SiC interface. / Basile, A. F.; Rozen, J.; Chen, X. D.; Dhar, S.; Williams, J. R.; Feldman, L. C.; Mooney, P. M.

Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4. ed. 2010. p. 95-102 (ECS Transactions; Vol. 28, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Rozen, J, Chen, XD, Dhar, S, Williams, JR, Feldman, LC & Mooney, PM 2010, Passivation of deep levels at the SiO₂/SiC interface. in Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4 edn, ECS Transactions, no. 4, vol. 28, pp. 95-102, Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting, Vancouver, BC, Canada, 4/25/10. https://doi.org/10.1149/13377105

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