Abstract
Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.
| Original language | English |
|---|---|
| Pages (from-to) | 2333-2336 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 9 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jul 1 1991 |
Fingerprint
Keywords
- Gallium arsenides
- Passivation
- Photoelectron spectroscopy
- Photoluminescence
- Recombination
- Surfaces
- Thiols
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Passivation of GaAs surface recombination with organic thiols. / Lunt, Sharon R.; Santangelo, Patrick G.; Lewis, Nathan S.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2333-2336.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Passivation of GaAs surface recombination with organic thiols
AU - Lunt, Sharon R.
AU - Santangelo, Patrick G.
AU - Lewis, Nathan S
PY - 1991/7/1
Y1 - 1991/7/1
N2 - Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.
AB - Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.
KW - Gallium arsenides
KW - Passivation
KW - Photoelectron spectroscopy
KW - Photoluminescence
KW - Recombination
KW - Surfaces
KW - Thiols
UR - http://www.scopus.com/inward/record.url?scp=84930010586&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84930010586&partnerID=8YFLogxK
U2 - 10.1116/1.585743
DO - 10.1116/1.585743
M3 - Article
AN - SCOPUS:84930010586
VL - 9
SP - 2333
EP - 2336
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -