Passivation of GaAs surface recombination with organic thiols

Sharon R. Lunt; Patrick G. Santangelo; Nathan S. Lewis

doi:10.1116/1.585743

Passivation of GaAs surface recombination with organic thiols

Sharon R. Lunt, Patrick G. Santangelo, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article

64 Citations (Scopus)

Abstract

Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na₂S·9H₂O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As⁰ nor form detectable levels of As₂S₃-like phases, implying that neither of these factors is required for effective surface passivation chemistry.

Original language	English
Pages (from-to)	2333-2336
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585743
Publication status	Published - Jul 1 1991

Fingerprint

Keywords

Gallium arsenides
Passivation
Photoelectron spectroscopy
Photoluminescence
Recombination
Surfaces
Thiols

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Lunt, S. R., Santangelo, P. G., & Lewis, N. S. (1991). Passivation of GaAs surface recombination with organic thiols. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 9(4), 2333-2336. https://doi.org/10.1116/1.585743

@article{c88dac92fea74b42ab49a72e9e84e778,

title = "Passivation of GaAs surface recombination with organic thiols",

abstract = "Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.",

keywords = "Gallium arsenides, Passivation, Photoelectron spectroscopy, Photoluminescence, Recombination, Surfaces, Thiols",

author = "Lunt, {Sharon R.} and Santangelo, {Patrick G.} and Lewis, {Nathan S.}",

year = "1991",

month = jul

day = "1",

doi = "10.1116/1.585743",

language = "English",

volume = "9",

pages = "2333--2336",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

}

TY - JOUR

T1 - Passivation of GaAs surface recombination with organic thiols

AU - Lunt, Sharon R.

AU - Santangelo, Patrick G.

AU - Lewis, Nathan S.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.

AB - Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.

KW - Gallium arsenides

KW - Passivation

KW - Photoelectron spectroscopy

KW - Photoluminescence

KW - Recombination

KW - Surfaces

KW - Thiols

UR - http://www.scopus.com/inward/record.url?scp=84930010586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930010586&partnerID=8YFLogxK

U2 - 10.1116/1.585743

DO - 10.1116/1.585743

M3 - Article

AN - SCOPUS:84930010586

VL - 9

SP - 2333

EP - 2336

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -

Access to Document

10.1116/1.585743