Passivation of GaAs surface recombination with organic thiols

Sharon R. Lunt, Patrick G. Santangelo, Nathan S Lewis

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na2S·9H2O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As0 nor form detectable levels of As2S3-like phases, implying that neither of these factors is required for effective surface passivation chemistry.

Original languageEnglish
Pages (from-to)2333-2336
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
Publication statusPublished - Jul 1 1991

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thiols
Passivation
passivity
Photoluminescence
X ray photoelectron spectroscopy
traps
photoelectron spectroscopy
chemistry
photoluminescence
Crystals
Electrons
crystals
electrons
x rays

Keywords

  • Gallium arsenides
  • Passivation
  • Photoelectron spectroscopy
  • Photoluminescence
  • Recombination
  • Surfaces
  • Thiols

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Passivation of GaAs surface recombination with organic thiols. / Lunt, Sharon R.; Santangelo, Patrick G.; Lewis, Nathan S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2333-2336.

Research output: Contribution to journalArticle

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