Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C. C. Tin, S. Dhar, A. Franceschetti, S. T. Pantelides, Leonard C Feldman, G. Chung, M. Chisholm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC.R. Abernathy, E.P. Gusev, D. Schlom, S. Stemmer
Pages371-378
Number of pages8
Volume786
Publication statusPublished - 2003
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States
Duration: Dec 1 2003Dec 4 2003

Other

OtherFundamentals of Novel Oxide/Semiconductor Interfaces Symposium
CountryUnited States
CityBoston, MA.
Period12/1/0312/4/03

Fingerprint

Nitric oxide
Passivation
Oxides
Hydrogen
Nitric Oxide
Thermooxidation
Interface states
Metallizing
Conduction bands
Oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Williams, J. R., Isaacs-Smith, T., Wang, S., Ahyi, C., Lawless, R. M., Tin, C. C., ... Chisholm, M. (2003). Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. In C. R. Abernathy, E. P. Gusev, D. Schlom, & S. Stemmer (Eds.), Materials Research Society Symposium - Proceedings (Vol. 786, pp. 371-378)

Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. / Williams, J. R.; Isaacs-Smith, T.; Wang, S.; Ahyi, C.; Lawless, R. M.; Tin, C. C.; Dhar, S.; Franceschetti, A.; Pantelides, S. T.; Feldman, Leonard C; Chung, G.; Chisholm, M.

Materials Research Society Symposium - Proceedings. ed. / C.R. Abernathy; E.P. Gusev; D. Schlom; S. Stemmer. Vol. 786 2003. p. 371-378.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Williams, JR, Isaacs-Smith, T, Wang, S, Ahyi, C, Lawless, RM, Tin, CC, Dhar, S, Franceschetti, A, Pantelides, ST, Feldman, LC, Chung, G & Chisholm, M 2003, Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. in CR Abernathy, EP Gusev, D Schlom & S Stemmer (eds), Materials Research Society Symposium - Proceedings. vol. 786, pp. 371-378, Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium, Boston, MA., United States, 12/1/03.
Williams JR, Isaacs-Smith T, Wang S, Ahyi C, Lawless RM, Tin CC et al. Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. In Abernathy CR, Gusev EP, Schlom D, Stemmer S, editors, Materials Research Society Symposium - Proceedings. Vol. 786. 2003. p. 371-378
Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, Leonard C ; Chung, G. ; Chisholm, M. / Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. Materials Research Society Symposium - Proceedings. editor / C.R. Abernathy ; E.P. Gusev ; D. Schlom ; S. Stemmer. Vol. 786 2003. pp. 371-378
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AU - Lawless, R. M.

AU - Tin, C. C.

AU - Dhar, S.

AU - Franceschetti, A.

AU - Pantelides, S. T.

AU - Feldman, Leonard C

AU - Chung, G.

AU - Chisholm, M.

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N2 - The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

AB - The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

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