Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C. C. Tin, S. Dhar, A. Franceschetti, S. T. Pantelides, L. C. Feldman, G. Chung, M. Chisholm

Research output: Contribution to journalConference articlepeer-review


The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

Original languageEnglish
Pages (from-to)371-378
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Dec 1 2003
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States
Duration: Dec 1 2003Dec 4 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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