Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

J. R. Williams; T. Isaacs-Smith; S. Wang; C. Ahyi; R. M. Lawless; C. C. Tin; S. Dhar; A. Franceschetti; S. T. Pantelides; L. C. Feldman; G. Chung; M. Chisholm

Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C. C. Tin, S. Dhar, A. Franceschetti, S. T. Pantelides, L. C. Feldman, G. Chung, M. Chisholm

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO₂ on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO₂ passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO₂ undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 10¹² cm ^-2 eV^-1 to about 6 × 10¹¹ cm^-2 eV^-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

Original language	English
Pages (from-to)	371-378
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	786
Publication status	Published - Dec 1 2003
Event	Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States Duration: Dec 1 2003 → Dec 4 2003

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen. / Williams, J. R.; Isaacs-Smith, T.; Wang, S.; Ahyi, C.; Lawless, R. M.; Tin, C. C.; Dhar, S.; Franceschetti, A.; Pantelides, S. T.; Feldman, L. C.; Chung, G.; Chisholm, M.

In: Materials Research Society Symposium - Proceedings, Vol. 786, 01.12.2003, p. 371-378.

Research output: Contribution to journal › Conference article › peer-review

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title = "Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen",

abstract = "The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.",

author = "Williams, {J. R.} and T. Isaacs-Smith and S. Wang and C. Ahyi and Lawless, {R. M.} and Tin, {C. C.} and S. Dhar and A. Franceschetti and Pantelides, {S. T.} and Feldman, {L. C.} and G. Chung and M. Chisholm",

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journal = "Materials Research Society Symposium - Proceedings",

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T1 - Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

AU - Williams, J. R.

AU - Isaacs-Smith, T.

AU - Wang, S.

AU - Ahyi, C.

AU - Lawless, R. M.

AU - Tin, C. C.

AU - Dhar, S.

AU - Franceschetti, A.

AU - Pantelides, S. T.

AU - Feldman, L. C.

AU - Chung, G.

AU - Chisholm, M.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

AB - The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm -2 eV-1 to about 6 × 1011 cm-2 eV-1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.

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VL - 786

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T2 - Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium

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