Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen

J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C. C. Tin, S. Dhar, A. Franceschetti, S. T. Pantelides, L. C. Feldman, G. Chung, M. Chisholm

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