Passivation of the 4H-SiC/SiO2 interface with nitric oxide

J. R. Williams, G. Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, R. A. Weller, S. T. Pantelides, O. W. Holland, M. K. Das, Leonard C Feldman

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper describes a nitrogen-based passivation technique for interface states near the conduction band edge in 4H-SiC/SiO2. These states were first proposed by Schorner, et al. [1], and their origin remains a point of discussion. However, there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n-channel, inversion mode 4H-SiC MOSFETs. A post-oxidation anneal in nitric oxide at atmospheric pressure, 1175°C and 200-400 sccm for 2hr reduces the interface state density at Ec-E ≅ 0.1 eV by more than one order of magnitude to approximately 2 × 1012cm-2eV-1. The effective channel mobilitiy for lateral n-channel 4H-MOSFETs increases correspondingly from single digits to approximately 30-40 cm2/V-s. The mobility for passivated devices exhibits a very weak temperature dependence compared to unpassivated devices for which the mobility increases in proportion to temperature to the power 1.9. The NO passivation process does not significantly affect the breakdown characteristics of thermal oxides on n- and p-4H-SiC, and the beneficial effects of passivation survive post-passivation processing procedures such as the high temperature anneals that are required to form source/drain ohmic contacts.

Original languageEnglish
Pages (from-to)967-972
Number of pages6
JournalMaterials Science Forum
Volume389-393
Issue number2
Publication statusPublished - 2002

Fingerprint

Nitric oxide
nitric oxide
Passivation
passivity
Nitric Oxide
Interface states
field effect transistors
digits
Ohmic contacts
Conduction bands
Temperature
Oxides
Atmospheric pressure
electric contacts
proportion
atmospheric pressure
conduction bands
Nitrogen
breakdown
inversions

Keywords

  • Interface States
  • Inversion Channel Mobility
  • Nitric Oxide Passivation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Williams, J. R., Chung, G. Y., Tin, C. C., McDonald, K., Farmer, D., Chanana, R. K., ... Feldman, L. C. (2002). Passivation of the 4H-SiC/SiO2 interface with nitric oxide. Materials Science Forum, 389-393(2), 967-972.

Passivation of the 4H-SiC/SiO2 interface with nitric oxide. / Williams, J. R.; Chung, G. Y.; Tin, C. C.; McDonald, K.; Farmer, D.; Chanana, R. K.; Weller, R. A.; Pantelides, S. T.; Holland, O. W.; Das, M. K.; Feldman, Leonard C.

In: Materials Science Forum, Vol. 389-393, No. 2, 2002, p. 967-972.

Research output: Contribution to journalArticle

Williams, JR, Chung, GY, Tin, CC, McDonald, K, Farmer, D, Chanana, RK, Weller, RA, Pantelides, ST, Holland, OW, Das, MK & Feldman, LC 2002, 'Passivation of the 4H-SiC/SiO2 interface with nitric oxide', Materials Science Forum, vol. 389-393, no. 2, pp. 967-972.
Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK et al. Passivation of the 4H-SiC/SiO2 interface with nitric oxide. Materials Science Forum. 2002;389-393(2):967-972.
Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; McDonald, K. ; Farmer, D. ; Chanana, R. K. ; Weller, R. A. ; Pantelides, S. T. ; Holland, O. W. ; Das, M. K. ; Feldman, Leonard C. / Passivation of the 4H-SiC/SiO2 interface with nitric oxide. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 2. pp. 967-972.
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