Passivation of the 4H-SiC/SiO2interface with nitric oxide

J. R. Williams, G. Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, R. A. Weller, S. T. Pantelides, O. W. Holland, M. K. Das, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

This paper describes a nitrogen-based passivation technique for interface states near the conduction band edge in 4H-SiC/SiO2. These states were first proposed by Schorner, et al. [1], and their origin remains a point of discussion. However, there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n- channel, inversion mode 4H-SiC MOSFETs. A post-oxidation anneal in nitric oxide at atmospheric pressure, 1175°C and 200-400sccm for 2hr reduces the interface state density at Ec- E≅ 0.1eV by more than one order of magnitude to approximately 2 × 1012cm2eV-1 The effective channel mobilitiy for lateral n-channel 4H-MOSFETs increases correspondingly from single digits to approximately 30-40cm2/V-s. The mobility for passivated devices exhibits a very weak temperature dependence compared to unpassivated devices for which the mobility increases in proportion to temperature to the power 1.9. 1 he NO passivation process does not significantly affect the breakdown characteristics of thermal oxides on n- and p-4H-SiC. and the beneficial effects of passivation survive post-passivation processing procedures such as the high temperature anneals that are required to form source/drain ohmic contacts.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages967-972
Number of pages6
ISBN (Print)9780878498949
DOIs
Publication statusPublished - Jan 1 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

Keywords

  • Interface states
  • Inversion channel mobility
  • Nitric oxide passivation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Williams, J. R., Chung, G. Y., Tin, C. C., McDonald, K., Farmer, D., Chanana, R. K., Weller, R. A., Pantelides, S. T., Holland, O. W., Das, M. K., & Feldman, L. C. (2002). Passivation of the 4H-SiC/SiO2interface with nitric oxide. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 967-972). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.967