@inproceedings{c85c432fc5904562b50b544a46b3f589,
title = "Passivation of the 4H-SiC/SiO2interface with nitric oxide",
abstract = "This paper describes a nitrogen-based passivation technique for interface states near the conduction band edge in 4H-SiC/SiO2. These states were first proposed by Schorner, et al. [1], and their origin remains a point of discussion. However, there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n- channel, inversion mode 4H-SiC MOSFETs. A post-oxidation anneal in nitric oxide at atmospheric pressure, 1175°C and 200-400sccm for 2hr reduces the interface state density at Ec- E≅ 0.1eV by more than one order of magnitude to approximately 2 × 1012cm2eV-1 The effective channel mobilitiy for lateral n-channel 4H-MOSFETs increases correspondingly from single digits to approximately 30-40cm2/V-s. The mobility for passivated devices exhibits a very weak temperature dependence compared to unpassivated devices for which the mobility increases in proportion to temperature to the power 1.9. 1 he NO passivation process does not significantly affect the breakdown characteristics of thermal oxides on n- and p-4H-SiC. and the beneficial effects of passivation survive post-passivation processing procedures such as the high temperature anneals that are required to form source/drain ohmic contacts.",
keywords = "Interface states, Inversion channel mobility, Nitric oxide passivation",
author = "Williams, {J. R.} and Chung, {G. Y.} and Tin, {C. C.} and K. McDonald and D. Farmer and Chanana, {R. K.} and Weller, {R. A.} and Pantelides, {S. T.} and Holland, {O. W.} and Das, {M. K.} and Feldman, {L. C.}",
note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",
year = "2002",
doi = "10.4028/www.scientific.net/MSF.389-393.967",
language = "English",
isbn = "9780878498949",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "967--972",
editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",
booktitle = "Silicon Carbide and Related Materials 2001",
}