Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

Gregory M. Kimball; Jeffrey P. Bosco; Astrid M. Müller; Syed F. Tajdar; Bruce S. Brunschwig; Harry A. Atwater; Nathan S. Lewis

doi:10.1063/1.4765030

Passivation of Zn₃P₂ substrates by aqueous chemical etching and air oxidation

Gregory M. Kimball, Jeffrey P. Bosco, Astrid M. Müller, Syed F. Tajdar, Bruce S. Brunschwig, Harry A. Atwater, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn₃P₂ surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn₃P₂ substrates. Zn ₃P₂ substrates that were etched with Br₂ in methanol exhibited surface recombination velocity values of 2.8 × 10 ⁴ cm s^-1, whereas substrates that were further treated by aqueous HF-H₂O₂ exhibited surface recombination velocity values of 1.0 × 10⁴ cm s^-1. Zn₃P ₂ substrates that were etched with Br₂ in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10³ cm s^-1, as well as improved ideality in metal/insulator/semiconductor devices.

Original language	English
Article number	106101
Journal	Journal of Applied Physics
Volume	112
Issue number	10
DOIs	https://doi.org/10.1063/1.4765030
Publication status	Published - Nov 15 2012

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{bb576f050173455d91004bbbe3d25d24,

title = "Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation",

abstract = "Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.",

author = "Kimball, {Gregory M.} and Bosco, {Jeffrey P.} and M{\"u}ller, {Astrid M.} and Tajdar, {Syed F.} and Brunschwig, {Bruce S.} and Atwater, {Harry A.} and Lewis, {Nathan S.}",

note = "Funding Information: This work was supported by the Department of Energy under Grant Nos. DE-FG02-03ER15483 and DE-FG36-08GO18006, by the Beckman Institute Laser Resource Center, and by the Dow Chemical Company. GMK acknowledges support by an NDSEG graduate fellowship and Jeffery W. Lefler is acknowledged for fabrication of a custom time-resolved photoluminescence chamber. ",

year = "2012",

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doi = "10.1063/1.4765030",

language = "English",

volume = "112",

journal = "Journal of Applied Physics",

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T1 - Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

AU - Kimball, Gregory M.

AU - Bosco, Jeffrey P.

AU - Müller, Astrid M.

AU - Tajdar, Syed F.

AU - Brunschwig, Bruce S.

AU - Atwater, Harry A.

AU - Lewis, Nathan S.

N1 - Funding Information: This work was supported by the Department of Energy under Grant Nos. DE-FG02-03ER15483 and DE-FG36-08GO18006, by the Beckman Institute Laser Resource Center, and by the Dow Chemical Company. GMK acknowledges support by an NDSEG graduate fellowship and Jeffery W. Lefler is acknowledged for fabrication of a custom time-resolved photoluminescence chamber.

PY - 2012/11/15

Y1 - 2012/11/15

N2 - Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.

AB - Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.

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