Abstract
Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.
Original language | English |
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Article number | 106101 |
Journal | Journal of Applied Physics |
Volume | 112 |
Issue number | 10 |
DOIs | |
Publication status | Published - Nov 15 2012 |
ASJC Scopus subject areas
- Physics and Astronomy(all)