Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

Gregory M. Kimball; Jeffrey P. Bosco; Astrid M. Müller; Syed F. Tajdar; Bruce S. Brunschwig; Harry A. Atwater; Nathan S. Lewis

doi:10.1063/1.4765030

Passivation of Zn₃P₂ substrates by aqueous chemical etching and air oxidation

Gregory M. Kimball, Jeffrey P. Bosco, Astrid M. Müller, Syed F. Tajdar, Bruce S. Brunschwig, Harry A. Atwater, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn₃P₂ surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn₃P₂ substrates. Zn ₃P₂ substrates that were etched with Br₂ in methanol exhibited surface recombination velocity values of 2.8 × 10 ⁴ cm s^-1, whereas substrates that were further treated by aqueous HF-H₂O₂ exhibited surface recombination velocity values of 1.0 × 10⁴ cm s^-1. Zn₃P ₂ substrates that were etched with Br₂ in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10³ cm s^-1, as well as improved ideality in metal/insulator/semiconductor devices.

Original language	English
Article number	106101
Journal	Journal of Applied Physics
Volume	112
Issue number	10
DOIs	https://doi.org/10.1063/1.4765030
Publication status	Published - Nov 15 2012

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Kimball, G. M., Bosco, J. P., Müller, A. M., Tajdar, S. F., Brunschwig, B. S., Atwater, H. A., & Lewis, N. S. (2012). Passivation of Zn₃P₂ substrates by aqueous chemical etching and air oxidation. Journal of Applied Physics, 112(10), [106101]. https://doi.org/10.1063/1.4765030

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abstract = "Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.",

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AU - Kimball, Gregory M.

AU - Bosco, Jeffrey P.

AU - Müller, Astrid M.

AU - Tajdar, Syed F.

AU - Brunschwig, Bruce S.

AU - Atwater, Harry A.

AU - Lewis, Nathan S.

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AB - Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.

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10.1063/1.4765030