Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

Gregory M. Kimball, Jeffrey P. Bosco, Astrid M. Müller, Syed F. Tajdar, Bruce S. Brunschwig, Harry A. Atwater, Nathan S. Lewis

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Abstract

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn3P2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn3P2 substrates. Zn 3P2 substrates that were etched with Br2 in methanol exhibited surface recombination velocity values of 2.8 × 10 4 cm s-1, whereas substrates that were further treated by aqueous HF-H2O2 exhibited surface recombination velocity values of 1.0 × 104 cm s-1. Zn3P 2 substrates that were etched with Br2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 103 cm s-1, as well as improved ideality in metal/insulator/semiconductor devices.

Original languageEnglish
Article number106101
JournalJournal of Applied Physics
Volume112
Issue number10
DOIs
Publication statusPublished - Nov 15 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kimball, G. M., Bosco, J. P., Müller, A. M., Tajdar, S. F., Brunschwig, B. S., Atwater, H. A., & Lewis, N. S. (2012). Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation. Journal of Applied Physics, 112(10), [106101]. https://doi.org/10.1063/1.4765030