Pentacene ultrathin film formation on reduced and oxidized Si surfaces

Ricardo Ruiz, Bert Nickel, Norbert Koch, Leonard C Feldman, Richard F. Haglund, Antoine Kahn, Giacinto Scoles

Research output: Contribution to journalArticle

201 Citations (Scopus)

Abstract

We have compared the nucleation of pentacene on reduced and oxidized Si surfaces by a combination of x-ray reflectivity measurements and atomic force microscopy. For the reduced surface, the nucleation density is 0.007 μm-2. Second monolayer (ML) formation starts at a coverage of Θ=0.6 ML, and the first layer is completely closed at a total coverage of 2 ML. For the oxidized surface, the nucleation density is larger by a factor of 100 (0.7 μm-2). Second ML formation also starts at Θ=0.6 ML, but the first layer closes already at 1.1 ML coverage, indicating nearly ideal layer-by-layer growth. For both terminations, the electron density obtained for the closed first monolayer is only 75% of the bulk value, indicating a reduced mass packing efficiency of the layer. Second ML islands are aligned relative to each other on an area limited by the lateral size of first ML islands, which act as templates for epitaxial growth.

Original languageEnglish
Article number125406
Pages (from-to)1254061-1254067
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number12
Publication statusPublished - Mar 2003

Fingerprint

Ultrathin films
Monolayers
nucleation
Nucleation
templates
pentacene
atomic force microscopy
reflectance
Epitaxial growth
Carrier concentration
Atomic force microscopy
x rays
X rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ruiz, R., Nickel, B., Koch, N., Feldman, L. C., Haglund, R. F., Kahn, A., & Scoles, G. (2003). Pentacene ultrathin film formation on reduced and oxidized Si surfaces. Physical Review B - Condensed Matter and Materials Physics, 67(12), 1254061-1254067. [125406].

Pentacene ultrathin film formation on reduced and oxidized Si surfaces. / Ruiz, Ricardo; Nickel, Bert; Koch, Norbert; Feldman, Leonard C; Haglund, Richard F.; Kahn, Antoine; Scoles, Giacinto.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 12, 125406, 03.2003, p. 1254061-1254067.

Research output: Contribution to journalArticle

Ruiz, R, Nickel, B, Koch, N, Feldman, LC, Haglund, RF, Kahn, A & Scoles, G 2003, 'Pentacene ultrathin film formation on reduced and oxidized Si surfaces', Physical Review B - Condensed Matter and Materials Physics, vol. 67, no. 12, 125406, pp. 1254061-1254067.
Ruiz R, Nickel B, Koch N, Feldman LC, Haglund RF, Kahn A et al. Pentacene ultrathin film formation on reduced and oxidized Si surfaces. Physical Review B - Condensed Matter and Materials Physics. 2003 Mar;67(12):1254061-1254067. 125406.
Ruiz, Ricardo ; Nickel, Bert ; Koch, Norbert ; Feldman, Leonard C ; Haglund, Richard F. ; Kahn, Antoine ; Scoles, Giacinto. / Pentacene ultrathin film formation on reduced and oxidized Si surfaces. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 67, No. 12. pp. 1254061-1254067.
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