Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics

Sanghyun Ju; Kangho Lee; Myung Han Yoon; Antonio Facchetti; Tobin J. Marks; David B. Janes

Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics

Sanghyun Ju, Kangho Lee, Myung Han Yoon, Antonio Facchetti, Tobin J. Marks, David B. Janes

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	28-29
Number of pages	2
Publication status	Published - Dec 1 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: Dec 7 2005 → Dec 9 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Other

Other	2005 International Semiconductor Device Research Symposium
Country	United States
City	Bethesda, MD
Period	12/7/05 → 12/9/05

ASJC Scopus subject areas

Engineering(all)

Access to Document

Cite this

Ju, S., Lee, K., Yoon, M. H., Facchetti, A., Marks, T. J., & Janes, D. B. (2005). Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics. In 2005 International Semiconductor Device Research Symposium (pp. 28-29). [1595960] (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics. / Ju, Sanghyun; Lee, Kangho; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.; Janes, David B.

2005 International Semiconductor Device Research Symposium. 2005. p. 28-29 1595960 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ju, S, Lee, K, Yoon, MH, Facchetti, A, Marks, TJ & Janes, DB 2005, Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics. in 2005 International Semiconductor Device Research Symposium., 1595960, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 28-29, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.

@inproceedings{f5e71d642324429ea3ae63519deec6aa,

title = "Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics",

author = "Sanghyun Ju and Kangho Lee and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin J.} and Janes, {David B.}",

year = "2005",

month = dec,

day = "1",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "28--29",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

TY - GEN

T1 - Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics

AU - Ju, Sanghyun

AU - Lee, Kangho

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Marks, Tobin J.

AU - Janes, David B.

PY - 2005/12/1

Y1 - 2005/12/1

UR - http://www.scopus.com/inward/record.url?scp=33847189555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847189555&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847189555

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 28

EP - 29

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -