Subsolidus phase relationships in the Ga 2O 3-In 2O 3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°-1400°C. The solubility limit of In 2O 3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga 2O 3 in cubic In 2O 3 increases with temperature from 4.8 ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO 3, which is not stable, but is likely the In-doped β-Ga 2O 3 solid solution.
|Number of pages||5|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Jan 1997|
ASJC Scopus subject areas
- Ceramics and Composites