Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system

Toshihiro Moriga, Doreen D. Edwards, Thomas O Mason, George B. Palmer, Kenneth R Poeppelmeier, Jon L. Schindler, Carl R. Kannewurf, Ichiro Nakabayashi

Research output: Contribution to journalArticle

155 Citations (Scopus)

Abstract

Equilibrium phase relationships in the ZnO-In 2O 3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In 2O 3, nine homologous compounds, Zn kIn 2O k+ 3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4% H 2-96% N 2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn 3In 2O 6.

Original languageEnglish
Pages (from-to)1310-1316
Number of pages7
JournalJournal of the American Ceramic Society
Volume81
Issue number5
Publication statusPublished - May 1998

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Zinc Oxide
Zinc oxide
Transparency
Indium
Physical properties
Gases
Oxides
Phase equilibria
X ray diffraction analysis
Carrier concentration
Annealing
Wavelength
Temperature
indium oxide
Electric Conductivity

ASJC Scopus subject areas

  • Ceramics and Composites

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Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system. / Moriga, Toshihiro; Edwards, Doreen D.; Mason, Thomas O; Palmer, George B.; Poeppelmeier, Kenneth R; Schindler, Jon L.; Kannewurf, Carl R.; Nakabayashi, Ichiro.

In: Journal of the American Ceramic Society, Vol. 81, No. 5, 05.1998, p. 1310-1316.

Research output: Contribution to journalArticle

Moriga, T, Edwards, DD, Mason, TO, Palmer, GB, Poeppelmeier, KR, Schindler, JL, Kannewurf, CR & Nakabayashi, I 1998, 'Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system', Journal of the American Ceramic Society, vol. 81, no. 5, pp. 1310-1316.
Moriga, Toshihiro ; Edwards, Doreen D. ; Mason, Thomas O ; Palmer, George B. ; Poeppelmeier, Kenneth R ; Schindler, Jon L. ; Kannewurf, Carl R. ; Nakabayashi, Ichiro. / Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system. In: Journal of the American Ceramic Society. 1998 ; Vol. 81, No. 5. pp. 1310-1316.
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abstract = "Equilibrium phase relationships in the ZnO-In 2O 3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In 2O 3, nine homologous compounds, Zn kIn 2O k+ 3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4{\%} H 2-96{\%} N 2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn 3In 2O 6.",
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AU - Edwards, Doreen D.

AU - Mason, Thomas O

AU - Palmer, George B.

AU - Poeppelmeier, Kenneth R

AU - Schindler, Jon L.

AU - Kannewurf, Carl R.

AU - Nakabayashi, Ichiro

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N2 - Equilibrium phase relationships in the ZnO-In 2O 3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In 2O 3, nine homologous compounds, Zn kIn 2O k+ 3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4% H 2-96% N 2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn 3In 2O 6.

AB - Equilibrium phase relationships in the ZnO-In 2O 3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In 2O 3, nine homologous compounds, Zn kIn 2O k+ 3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4% H 2-96% N 2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn 3In 2O 6.

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