Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system

Toshihiro Moriga, Doreen D. Edwards, Thomas O Mason, George B. Palmer, Kenneth R Poeppelmeier, Jon L. Schindler, Carl R. Kannewurf, Ichiro Nakabayashi

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Abstract

Equilibrium phase relationships in the ZnO-In 2O 3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In 2O 3, nine homologous compounds, Zn kIn 2O k+ 3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4% H 2-96% N 2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn 3In 2O 6.

Original languageEnglish
Pages (from-to)1310-1316
Number of pages7
JournalJournal of the American Ceramic Society
Volume81
Issue number5
Publication statusPublished - May 1998

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ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Moriga, T., Edwards, D. D., Mason, T. O., Palmer, G. B., Poeppelmeier, K. R., Schindler, J. L., Kannewurf, C. R., & Nakabayashi, I. (1998). Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system. Journal of the American Ceramic Society, 81(5), 1310-1316.