Phase relationships and physical properties of homologous compounds in the zinc oxide-indium oxide system

Toshihiro Moriga, Doreen D. Edwards, Thomas O. Mason, George B. Palmer, Kenneth R. Poeppelmeier, Jon L. Schindler, Carl R. Kannewurf, Ichiro Nakabayashi

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

Equilibrium phase relationships in the ZnO-In2O3 system were determined between 1100° and 140O°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In2O3, nine homologous compounds, ZnkIn2Ok+3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 40O°C for 1 h under forming gas (4% H2-96% N2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn3In2O6.

Original languageEnglish
Pages (from-to)1310-1316
Number of pages7
JournalJournal of the American Ceramic Society
Volume81
Issue number5
DOIs
Publication statusPublished - May 1998

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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