Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates

D. L. Proffit, G. R. Bai, D. D. Fong, T. T. Fister, S. O. Hruszkewycz, M. J. Highland, P. M. Baldo, P. H. Fuoss, T. O. Mason, J. A. Eastman

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Abstract

We observe that the high-temperature δ-phase of Bi2 O 3 is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO3 or (001)p -oriented DyScO3 single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi2 O3 nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.

Original languageEnglish
Article number021905
JournalApplied Physics Letters
Volume96
Issue number2
DOIs
Publication statusPublished - Jan 25 2010

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Proffit, D. L., Bai, G. R., Fong, D. D., Fister, T. T., Hruszkewycz, S. O., Highland, M. J., Baldo, P. M., Fuoss, P. H., Mason, T. O., & Eastman, J. A. (2010). Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates. Applied Physics Letters, 96(2), [021905]. https://doi.org/10.1063/1.3291068