Phosphine functionalization of GaAs(111)A surfaces

Matthew C. Traub, Julie S. Biteen, David J. Michalak, Lauren J. Webb, Bruce S. Brunschwig, Nathan S. Lewis

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111) A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111) A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.

Original languageEnglish
Pages (from-to)18467-18473
Number of pages7
JournalJournal of Physical Chemistry C
Volume112
Issue number47
DOIs
Publication statusPublished - Nov 27 2008

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Traub, M. C., Biteen, J. S., Michalak, D. J., Webb, L. J., Brunschwig, B. S., & Lewis, N. S. (2008). Phosphine functionalization of GaAs(111)A surfaces. Journal of Physical Chemistry C, 112(47), 18467-18473. https://doi.org/10.1021/jp803992h