Phosphine functionalization of GaAs(111)A surfaces

Matthew C. Traub, Julie S. Biteen, David J. Michalak, Lauren J. Webb, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111) A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111) A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.

Original languageEnglish
Pages (from-to)18467-18473
Number of pages7
JournalJournal of Physical Chemistry C
Volume112
Issue number47
DOIs
Publication statusPublished - Nov 27 2008

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phosphine
phosphines
Oxides
oxides
gallium arsenide

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Traub, M. C., Biteen, J. S., Michalak, D. J., Webb, L. J., Brunschwig, B. S., & Lewis, N. S. (2008). Phosphine functionalization of GaAs(111)A surfaces. Journal of Physical Chemistry C, 112(47), 18467-18473. https://doi.org/10.1021/jp803992h

Phosphine functionalization of GaAs(111)A surfaces. / Traub, Matthew C.; Biteen, Julie S.; Michalak, David J.; Webb, Lauren J.; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Journal of Physical Chemistry C, Vol. 112, No. 47, 27.11.2008, p. 18467-18473.

Research output: Contribution to journalArticle

Traub, MC, Biteen, JS, Michalak, DJ, Webb, LJ, Brunschwig, BS & Lewis, NS 2008, 'Phosphine functionalization of GaAs(111)A surfaces', Journal of Physical Chemistry C, vol. 112, no. 47, pp. 18467-18473. https://doi.org/10.1021/jp803992h
Traub MC, Biteen JS, Michalak DJ, Webb LJ, Brunschwig BS, Lewis NS. Phosphine functionalization of GaAs(111)A surfaces. Journal of Physical Chemistry C. 2008 Nov 27;112(47):18467-18473. https://doi.org/10.1021/jp803992h
Traub, Matthew C. ; Biteen, Julie S. ; Michalak, David J. ; Webb, Lauren J. ; Brunschwig, Bruce S. ; Lewis, Nathan S. / Phosphine functionalization of GaAs(111)A surfaces. In: Journal of Physical Chemistry C. 2008 ; Vol. 112, No. 47. pp. 18467-18473.
@article{dcc3f9eba5e64ed1948bcf02359dcabd,
title = "Phosphine functionalization of GaAs(111)A surfaces",
abstract = "Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111) A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111) A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.",
author = "Traub, {Matthew C.} and Biteen, {Julie S.} and Michalak, {David J.} and Webb, {Lauren J.} and Brunschwig, {Bruce S.} and Lewis, {Nathan S}",
year = "2008",
month = "11",
day = "27",
doi = "10.1021/jp803992h",
language = "English",
volume = "112",
pages = "18467--18473",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "47",

}

TY - JOUR

T1 - Phosphine functionalization of GaAs(111)A surfaces

AU - Traub, Matthew C.

AU - Biteen, Julie S.

AU - Michalak, David J.

AU - Webb, Lauren J.

AU - Brunschwig, Bruce S.

AU - Lewis, Nathan S

PY - 2008/11/27

Y1 - 2008/11/27

N2 - Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111) A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111) A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.

AB - Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111) A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111) A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.

UR - http://www.scopus.com/inward/record.url?scp=57549085134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57549085134&partnerID=8YFLogxK

U2 - 10.1021/jp803992h

DO - 10.1021/jp803992h

M3 - Article

VL - 112

SP - 18467

EP - 18473

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 47

ER -