Abstract
The correlation between phosphorus concentration in phospho-silicate glass (PSG) gate dielectrics and electrical properties of 4H-SiC MOS devices has been investigated. Varying P uptake in PSG is achieved by changing the POCl3 post-oxidation annealing temperature. The density of interface traps (Dit) at the PSG/4H-SiC interface decreases as the amount of interfacial P increases. Most significantly, the MOSFET channel mobility does not correlate with Dit for all samples, which is highly unusual for SiC MOSFETs. Further analysis reveals two types of field-effect mobility (μfe) behavior, depending on the annealing temperature. Annealing at 1000 °C improves the channel mobility most effectively, with a peak value ∼105 cm2 V-1 s-1, and results in a surface phonon scattering limited mobility at high oxide field. On the other hand, PSG annealed at other temperatures results in a surface roughness scattering limited mobility at similar field.
| Original language | English |
|---|---|
| Article number | 155705 |
| Journal | Journal of Applied Physics |
| Volume | 119 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Apr 21 2016 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices : Phosphorus concentration dependence. / Jiao, C.; Ahyi, A. C.; Xu, C.; Morisette, D.; Feldman, L. C.; Dhar, S.
In: Journal of Applied Physics, Vol. 119, No. 15, 155705, 21.04.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices
T2 - Phosphorus concentration dependence
AU - Jiao, C.
AU - Ahyi, A. C.
AU - Xu, C.
AU - Morisette, D.
AU - Feldman, L. C.
AU - Dhar, S.
PY - 2016/4/21
Y1 - 2016/4/21
N2 - The correlation between phosphorus concentration in phospho-silicate glass (PSG) gate dielectrics and electrical properties of 4H-SiC MOS devices has been investigated. Varying P uptake in PSG is achieved by changing the POCl3 post-oxidation annealing temperature. The density of interface traps (Dit) at the PSG/4H-SiC interface decreases as the amount of interfacial P increases. Most significantly, the MOSFET channel mobility does not correlate with Dit for all samples, which is highly unusual for SiC MOSFETs. Further analysis reveals two types of field-effect mobility (μfe) behavior, depending on the annealing temperature. Annealing at 1000 °C improves the channel mobility most effectively, with a peak value ∼105 cm2 V-1 s-1, and results in a surface phonon scattering limited mobility at high oxide field. On the other hand, PSG annealed at other temperatures results in a surface roughness scattering limited mobility at similar field.
AB - The correlation between phosphorus concentration in phospho-silicate glass (PSG) gate dielectrics and electrical properties of 4H-SiC MOS devices has been investigated. Varying P uptake in PSG is achieved by changing the POCl3 post-oxidation annealing temperature. The density of interface traps (Dit) at the PSG/4H-SiC interface decreases as the amount of interfacial P increases. Most significantly, the MOSFET channel mobility does not correlate with Dit for all samples, which is highly unusual for SiC MOSFETs. Further analysis reveals two types of field-effect mobility (μfe) behavior, depending on the annealing temperature. Annealing at 1000 °C improves the channel mobility most effectively, with a peak value ∼105 cm2 V-1 s-1, and results in a surface phonon scattering limited mobility at high oxide field. On the other hand, PSG annealed at other temperatures results in a surface roughness scattering limited mobility at similar field.
UR - http://www.scopus.com/inward/record.url?scp=84966295061&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84966295061&partnerID=8YFLogxK
U2 - 10.1063/1.4947117
DO - 10.1063/1.4947117
M3 - Article
AN - SCOPUS:84966295061
VL - 119
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 15
M1 - 155705
ER -