Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

C. Jiao, A. C. Ahyi, C. Xu, D. Morisette, L. C. Feldman, S. Dhar

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The correlation between phosphorus concentration in phospho-silicate glass (PSG) gate dielectrics and electrical properties of 4H-SiC MOS devices has been investigated. Varying P uptake in PSG is achieved by changing the POCl3 post-oxidation annealing temperature. The density of interface traps (Dit) at the PSG/4H-SiC interface decreases as the amount of interfacial P increases. Most significantly, the MOSFET channel mobility does not correlate with Dit for all samples, which is highly unusual for SiC MOSFETs. Further analysis reveals two types of field-effect mobility (μfe) behavior, depending on the annealing temperature. Annealing at 1000 °C improves the channel mobility most effectively, with a peak value ∼105 cm2 V-1 s-1, and results in a surface phonon scattering limited mobility at high oxide field. On the other hand, PSG annealed at other temperatures results in a surface roughness scattering limited mobility at similar field.

Original languageEnglish
Article number155705
JournalJournal of Applied Physics
Volume119
Issue number15
DOIs
Publication statusPublished - Apr 21 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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