Phosphorous passivation of the SiO 2/4H-SiC interface

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, X. Shen, S. T. Pantelides, X. Zhu, Leonard C Feldman, J. Rozen, J. R. Williams

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We describe experimental and theoretical studies to determine the effects of phosphorous as a passivating agent for the SiO 2/4H-SiC interface. Annealing in a P 2O 5 ambient converts the SiO 2 layer to PSG (phosphosilicate glass) which is known to be a polar material. Higher mobility (approximately twice the value of 30-40 cm 2/V s obtained using nitrogen introduced with an anneal in nitric oxide) and lower threshold voltage are compatible with a lower interface defect density. Trap density, current-voltage and bias-temperature stress (BTS) measurements for MOS capacitors are also discussed. The BTS measurements point to the possibility of an unstable MOSFET threshold voltage caused by PSG polarization charge at the O-S interface. Theoretical considerations suggest that threefold carbon atoms at the interface can be passivated by phosphorous which leads to a lower interface trap density and a higher effective mobility for electrons in the channel. The roles of phosphorous in the passivation of correlated carbon dangling bonds, for SiC counter-doping, for interface band-tail state suppression, for Na-like impurity band formation and for substrate trap passivation are also discussed briefly.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalSolid-State Electronics
Volume68
DOIs
Publication statusPublished - Feb 2012

Fingerprint

Stress measurement
Threshold voltage
Passivation
Temperature measurement
passivity
Carbon
MOS capacitors
Glass
Dangling bonds
Defect density
Nitric oxide
Nitric Oxide
Current density
Nitrogen
stress measurement
Doping (additives)
traps
Annealing
Impurities
Polarization

Keywords

  • Channel mobility
  • Interface trap density
  • Phosphorous
  • Threshold voltage stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Shen, X., Pantelides, S. T., Zhu, X., ... Williams, J. R. (2012). Phosphorous passivation of the SiO 2/4H-SiC interface. Solid-State Electronics, 68, 103-107. https://doi.org/10.1016/j.sse.2011.10.030

Phosphorous passivation of the SiO 2/4H-SiC interface. / Sharma, Y. K.; Ahyi, A. C.; Issacs-Smith, T.; Shen, X.; Pantelides, S. T.; Zhu, X.; Feldman, Leonard C; Rozen, J.; Williams, J. R.

In: Solid-State Electronics, Vol. 68, 02.2012, p. 103-107.

Research output: Contribution to journalArticle

Sharma, YK, Ahyi, AC, Issacs-Smith, T, Shen, X, Pantelides, ST, Zhu, X, Feldman, LC, Rozen, J & Williams, JR 2012, 'Phosphorous passivation of the SiO 2/4H-SiC interface', Solid-State Electronics, vol. 68, pp. 103-107. https://doi.org/10.1016/j.sse.2011.10.030
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X et al. Phosphorous passivation of the SiO 2/4H-SiC interface. Solid-State Electronics. 2012 Feb;68:103-107. https://doi.org/10.1016/j.sse.2011.10.030
Sharma, Y. K. ; Ahyi, A. C. ; Issacs-Smith, T. ; Shen, X. ; Pantelides, S. T. ; Zhu, X. ; Feldman, Leonard C ; Rozen, J. ; Williams, J. R. / Phosphorous passivation of the SiO 2/4H-SiC interface. In: Solid-State Electronics. 2012 ; Vol. 68. pp. 103-107.
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AB - We describe experimental and theoretical studies to determine the effects of phosphorous as a passivating agent for the SiO 2/4H-SiC interface. Annealing in a P 2O 5 ambient converts the SiO 2 layer to PSG (phosphosilicate glass) which is known to be a polar material. Higher mobility (approximately twice the value of 30-40 cm 2/V s obtained using nitrogen introduced with an anneal in nitric oxide) and lower threshold voltage are compatible with a lower interface defect density. Trap density, current-voltage and bias-temperature stress (BTS) measurements for MOS capacitors are also discussed. The BTS measurements point to the possibility of an unstable MOSFET threshold voltage caused by PSG polarization charge at the O-S interface. Theoretical considerations suggest that threefold carbon atoms at the interface can be passivated by phosphorous which leads to a lower interface trap density and a higher effective mobility for electrons in the channel. The roles of phosphorous in the passivation of correlated carbon dangling bonds, for SiC counter-doping, for interface band-tail state suppression, for Na-like impurity band formation and for substrate trap passivation are also discussed briefly.

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