Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7

Z. Liu, J. A. Peters, H. Li, Mercouri G Kanatzidis, J. Im, H. Jin, Arthur J Freeman, B. W. Wessels

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10−20–10−15 cm2.

Original languageEnglish
Pages (from-to)222-226
Number of pages5
JournalJournal of Electronic Materials
Volume44
Issue number1
DOIs
Publication statusPublished - 2015

Fingerprint

Induced currents
Single crystals
Spectroscopy
Defects
single crystals
defects
spectroscopy
antisite defects
absorption cross sections
Vacancies
activation energy
Activation energy
Semiconductor materials
room temperature
radiation
Radiation
Temperature

Keywords

  • Cs-based semiconductor
  • defects
  • photoconductivity
  • wide gap semiconductor
  • γ-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 . / Liu, Z.; Peters, J. A.; Li, H.; Kanatzidis, Mercouri G; Im, J.; Jin, H.; Freeman, Arthur J; Wessels, B. W.

In: Journal of Electronic Materials, Vol. 44, No. 1, 2015, p. 222-226.

Research output: Contribution to journalArticle

Liu, Z. ; Peters, J. A. ; Li, H. ; Kanatzidis, Mercouri G ; Im, J. ; Jin, H. ; Freeman, Arthur J ; Wessels, B. W. / Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 In: Journal of Electronic Materials. 2015 ; Vol. 44, No. 1. pp. 222-226.
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