Abstract
The chemical concept of lattice hybridization was applied to identify new chalcohalide compounds as candidates for X-ray and γ-ray detection. Per this approach, compound semiconductor materials with high density and wide band gaps can be produced that can absorb and detect hard radiation. Here, we show that the mixed chalcogenide-halide compound Tl6SI4 is a congruently melting, mechanically robust chalcohalide material with strong photoconductivity response and an impressive room-temperature figure of merit. Tl6SI4 crystallizes in the tetragonal P4/mnc space group, with a = 9.1758(13) Å, c = 9.5879(19) Å, V = 807.3(2) Å3, and a calculated density of 7.265 g·cm-3. The new material requires a more simplified crystal growth compared to the leading system Cd0.9Zn0.1Te, which is the benchmark room-temperature hard radiation detector material. We successfully synthesized Tl6SI4 crystals to produce detector-grade wafers with high resistivity values (∼1010 Ω·cm) and high-resolution detection of X-ray spectra from an Ag (22 keV) source.
| Original language | English |
|---|---|
| Pages (from-to) | 2868-2877 |
| Number of pages | 10 |
| Journal | Chemistry of Materials |
| Volume | 25 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - Jul 23 2013 |
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Keywords
- chalcogenide
- crystal growth
- radiation detection
- wide-gap semiconductors
ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
Photoconductivity in Tl6SI4 : A novel semiconductor for hard radiation detection. / Nguyen, Sandy L.; Malliakas, Christos D.; Peters, John A.; Liu, Zhifu; Im, Jino; Zhao, Li Dong; Sebastian, Maria; Jin, Hosub; Li, Hao; Johnsen, Simon; Wessels, Bruce W.; Freeman, Arthur J; Kanatzidis, Mercouri G.
In: Chemistry of Materials, Vol. 25, No. 14, 23.07.2013, p. 2868-2877.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoconductivity in Tl6SI4
T2 - A novel semiconductor for hard radiation detection
AU - Nguyen, Sandy L.
AU - Malliakas, Christos D.
AU - Peters, John A.
AU - Liu, Zhifu
AU - Im, Jino
AU - Zhao, Li Dong
AU - Sebastian, Maria
AU - Jin, Hosub
AU - Li, Hao
AU - Johnsen, Simon
AU - Wessels, Bruce W.
AU - Freeman, Arthur J
AU - Kanatzidis, Mercouri G
PY - 2013/7/23
Y1 - 2013/7/23
N2 - The chemical concept of lattice hybridization was applied to identify new chalcohalide compounds as candidates for X-ray and γ-ray detection. Per this approach, compound semiconductor materials with high density and wide band gaps can be produced that can absorb and detect hard radiation. Here, we show that the mixed chalcogenide-halide compound Tl6SI4 is a congruently melting, mechanically robust chalcohalide material with strong photoconductivity response and an impressive room-temperature figure of merit. Tl6SI4 crystallizes in the tetragonal P4/mnc space group, with a = 9.1758(13) Å, c = 9.5879(19) Å, V = 807.3(2) Å3, and a calculated density of 7.265 g·cm-3. The new material requires a more simplified crystal growth compared to the leading system Cd0.9Zn0.1Te, which is the benchmark room-temperature hard radiation detector material. We successfully synthesized Tl6SI4 crystals to produce detector-grade wafers with high resistivity values (∼1010 Ω·cm) and high-resolution detection of X-ray spectra from an Ag (22 keV) source.
AB - The chemical concept of lattice hybridization was applied to identify new chalcohalide compounds as candidates for X-ray and γ-ray detection. Per this approach, compound semiconductor materials with high density and wide band gaps can be produced that can absorb and detect hard radiation. Here, we show that the mixed chalcogenide-halide compound Tl6SI4 is a congruently melting, mechanically robust chalcohalide material with strong photoconductivity response and an impressive room-temperature figure of merit. Tl6SI4 crystallizes in the tetragonal P4/mnc space group, with a = 9.1758(13) Å, c = 9.5879(19) Å, V = 807.3(2) Å3, and a calculated density of 7.265 g·cm-3. The new material requires a more simplified crystal growth compared to the leading system Cd0.9Zn0.1Te, which is the benchmark room-temperature hard radiation detector material. We successfully synthesized Tl6SI4 crystals to produce detector-grade wafers with high resistivity values (∼1010 Ω·cm) and high-resolution detection of X-ray spectra from an Ag (22 keV) source.
KW - chalcogenide
KW - crystal growth
KW - radiation detection
KW - wide-gap semiconductors
UR - http://www.scopus.com/inward/record.url?scp=84880631050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880631050&partnerID=8YFLogxK
U2 - 10.1021/cm401406j
DO - 10.1021/cm401406j
M3 - Article
AN - SCOPUS:84880631050
VL - 25
SP - 2868
EP - 2877
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 14
ER -