Photoconductivity in Tl6SI4

A novel semiconductor for hard radiation detection

Sandy L. Nguyen, Christos D. Malliakas, John A. Peters, Zhifu Liu, Jino Im, Li Dong Zhao, Maria Sebastian, Hosub Jin, Hao Li, Simon Johnsen, Bruce W. Wessels, Arthur J Freeman, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The chemical concept of lattice hybridization was applied to identify new chalcohalide compounds as candidates for X-ray and γ-ray detection. Per this approach, compound semiconductor materials with high density and wide band gaps can be produced that can absorb and detect hard radiation. Here, we show that the mixed chalcogenide-halide compound Tl6SI4 is a congruently melting, mechanically robust chalcohalide material with strong photoconductivity response and an impressive room-temperature figure of merit. Tl6SI4 crystallizes in the tetragonal P4/mnc space group, with a = 9.1758(13) Å, c = 9.5879(19) Å, V = 807.3(2) Å3, and a calculated density of 7.265 g·cm-3. The new material requires a more simplified crystal growth compared to the leading system Cd0.9Zn0.1Te, which is the benchmark room-temperature hard radiation detector material. We successfully synthesized Tl6SI4 crystals to produce detector-grade wafers with high resistivity values (∼1010 Ω·cm) and high-resolution detection of X-ray spectra from an Ag (22 keV) source.

Original languageEnglish
Pages (from-to)2868-2877
Number of pages10
JournalChemistry of Materials
Volume25
Issue number14
DOIs
Publication statusPublished - Jul 23 2013

Fingerprint

Photoconductivity
Semiconductor materials
Radiation
X rays
Radiation detectors
Crystallization
Crystal growth
Melting
Energy gap
Detectors
Temperature
Crystals

Keywords

  • chalcogenide
  • crystal growth
  • radiation detection
  • wide-gap semiconductors

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Nguyen, S. L., Malliakas, C. D., Peters, J. A., Liu, Z., Im, J., Zhao, L. D., ... Kanatzidis, M. G. (2013). Photoconductivity in Tl6SI4: A novel semiconductor for hard radiation detection. Chemistry of Materials, 25(14), 2868-2877. https://doi.org/10.1021/cm401406j

Photoconductivity in Tl6SI4 : A novel semiconductor for hard radiation detection. / Nguyen, Sandy L.; Malliakas, Christos D.; Peters, John A.; Liu, Zhifu; Im, Jino; Zhao, Li Dong; Sebastian, Maria; Jin, Hosub; Li, Hao; Johnsen, Simon; Wessels, Bruce W.; Freeman, Arthur J; Kanatzidis, Mercouri G.

In: Chemistry of Materials, Vol. 25, No. 14, 23.07.2013, p. 2868-2877.

Research output: Contribution to journalArticle

Nguyen, SL, Malliakas, CD, Peters, JA, Liu, Z, Im, J, Zhao, LD, Sebastian, M, Jin, H, Li, H, Johnsen, S, Wessels, BW, Freeman, AJ & Kanatzidis, MG 2013, 'Photoconductivity in Tl6SI4: A novel semiconductor for hard radiation detection', Chemistry of Materials, vol. 25, no. 14, pp. 2868-2877. https://doi.org/10.1021/cm401406j
Nguyen SL, Malliakas CD, Peters JA, Liu Z, Im J, Zhao LD et al. Photoconductivity in Tl6SI4: A novel semiconductor for hard radiation detection. Chemistry of Materials. 2013 Jul 23;25(14):2868-2877. https://doi.org/10.1021/cm401406j
Nguyen, Sandy L. ; Malliakas, Christos D. ; Peters, John A. ; Liu, Zhifu ; Im, Jino ; Zhao, Li Dong ; Sebastian, Maria ; Jin, Hosub ; Li, Hao ; Johnsen, Simon ; Wessels, Bruce W. ; Freeman, Arthur J ; Kanatzidis, Mercouri G. / Photoconductivity in Tl6SI4 : A novel semiconductor for hard radiation detection. In: Chemistry of Materials. 2013 ; Vol. 25, No. 14. pp. 2868-2877.
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