Abstract
Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.
| Original language | English |
|---|---|
| Pages (from-to) | 3916-3925 |
| Number of pages | 10 |
| Journal | Journal of Applied Physics |
| Volume | 51 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1980 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3. / Jarrett, H. S.; Sleight, A. W.; Kung, Harold H; Gillson, J. L.
In: Journal of Applied Physics, Vol. 51, No. 7, 07.1980, p. 3916-3925.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3.
AU - Jarrett, H. S.
AU - Sleight, A. W.
AU - Kung, Harold H
AU - Gillson, J. L.
PY - 1980/7
Y1 - 1980/7
N2 - Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.
AB - Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.
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UR - http://www.scopus.com/inward/citedby.url?scp=0019033935&partnerID=8YFLogxK
U2 - 10.1063/1.328139
DO - 10.1063/1.328139
M3 - Article
AN - SCOPUS:0019033935
VL - 51
SP - 3916
EP - 3925
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -