PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3.

H. S. Jarrett, A. W. Sleight, Harold H Kung, J. L. Gillson

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.

Original languageEnglish
Pages (from-to)3916-3925
Number of pages10
JournalJournal of Applied Physics
Volume51
Issue number7
DOIs
Publication statusPublished - Jul 1980

Fingerprint

solid state
oxides
capacitance
impurities
corrosion
anodes
activation energy
magnetic permeability
electrical resistivity
synthesis
estimates
water
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3. / Jarrett, H. S.; Sleight, A. W.; Kung, Harold H; Gillson, J. L.

In: Journal of Applied Physics, Vol. 51, No. 7, 07.1980, p. 3916-3925.

Research output: Contribution to journalArticle

Jarrett, H. S. ; Sleight, A. W. ; Kung, Harold H ; Gillson, J. L. / PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3. In: Journal of Applied Physics. 1980 ; Vol. 51, No. 7. pp. 3916-3925.
@article{658cf5346c424613a9d8d3018d5a5989,
title = "PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3.",
abstract = "Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1{\%} for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.",
author = "Jarrett, {H. S.} and Sleight, {A. W.} and Kung, {Harold H} and Gillson, {J. L.}",
year = "1980",
month = "7",
doi = "10.1063/1.328139",
language = "English",
volume = "51",
pages = "3916--3925",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - PHOTOELECTROCHEMICAL AND SOLID-STATE PROPERTIES OF LuRhO//3.

AU - Jarrett, H. S.

AU - Sleight, A. W.

AU - Kung, Harold H

AU - Gillson, J. L.

PY - 1980/7

Y1 - 1980/7

N2 - Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.

AB - Results are reported for an electrochemically stable p-type oxide, LuRhO//3, which both resists corrosion and possesses a sufficiently large photopotential, and which may be used in conjunction with an n-type anode, such as TiO//2, to photoelectrolyze water spontaneously without an externally applied potential. As synthesized, LuRhO//3 is p type as determined by thermoelectric power measurements, but may be doped n type by the introduction of Th** plus **4 during synthesis. Electrical resistivity data indicate that this oxide passes through compensation as the doping level increases, the activation energy at compensation being one-half the optical band gap. The concentration of donor and acceptor impurities was determined by magnetic susceptibility to be in the vicinity of 1% for all samples. From these data, an estimate of 2. 5 cm**2/V sec can be made for the mobility of holes and 1 cm**2/V sec for the mobility of electrons. Unlike most n-type oxides reported, LuRhO//3 possesses deep lying impurity levels and surface capacitance is far from Mott-Schottky behavior. A theory of surface capacitance for deep levels has been developed, and the data agree well with theory.

UR - http://www.scopus.com/inward/record.url?scp=0019033935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019033935&partnerID=8YFLogxK

U2 - 10.1063/1.328139

DO - 10.1063/1.328139

M3 - Article

VL - 51

SP - 3916

EP - 3925

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -