Abstract
The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.
| Original language | English |
|---|---|
| Pages (from-to) | 17246-17249 |
| Number of pages | 4 |
| Journal | Journal of the American Chemical Society |
| Volume | 135 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - Nov 20 2013 |
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ASJC Scopus subject areas
- Chemistry(all)
- Catalysis
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene. / Nielander, Adam C.; Bierman, Matthew J.; Petrone, Nicholas; Strandwitz, Nicholas C.; Ardo, Shane; Yang, Fan; Hone, James; Lewis, Nathan S.
In: Journal of the American Chemical Society, Vol. 135, No. 46, 20.11.2013, p. 17246-17249.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene
AU - Nielander, Adam C.
AU - Bierman, Matthew J.
AU - Petrone, Nicholas
AU - Strandwitz, Nicholas C.
AU - Ardo, Shane
AU - Yang, Fan
AU - Hone, James
AU - Lewis, Nathan S
PY - 2013/11/20
Y1 - 2013/11/20
N2 - The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.
AB - The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.
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U2 - 10.1021/ja407462g
DO - 10.1021/ja407462g
M3 - Article
VL - 135
SP - 17246
EP - 17249
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 46
ER -