Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene

Adam C. Nielander; Matthew J. Bierman; Nicholas Petrone; Nicholas C. Strandwitz; Shane Ardo; Fan Yang; James Hone; Nathan S. Lewis

doi:10.1021/ja407462g

Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene

Adam C. Nielander, Matthew J. Bierman, Nicholas Petrone, Nicholas C. Strandwitz, Shane Ardo, Fan Yang, James Hone, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K₃[Fe(CN)₆]/K₄[Fe(CN)₆] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm^-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.

Original language	English
Pages (from-to)	17246-17249
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	135
Issue number	46
DOIs	https://doi.org/10.1021/ja407462g
Publication status	Published - Nov 20 2013

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene. / Nielander, Adam C.; Bierman, Matthew J.; Petrone, Nicholas; Strandwitz, Nicholas C.; Ardo, Shane; Yang, Fan; Hone, James; Lewis, Nathan S.

In: Journal of the American Chemical Society, Vol. 135, No. 46, 20.11.2013, p. 17246-17249.

Research output: Contribution to journal › Article › peer-review

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abstract = "The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.",

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AU - Nielander, Adam C.

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AU - Petrone, Nicholas

AU - Strandwitz, Nicholas C.

AU - Ardo, Shane

AU - Yang, Fan

AU - Hone, James

AU - Lewis, Nathan S.

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AB - The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.

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