Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene

Adam C. Nielander, Matthew J. Bierman, Nicholas Petrone, Nicholas C. Strandwitz, Shane Ardo, Fan Yang, James Hone, Nathan S. Lewis

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Abstract

The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ∼100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.

Original languageEnglish
Pages (from-to)17246-17249
Number of pages4
JournalJournal of the American Chemical Society
Volume135
Issue number46
DOIs
Publication statusPublished - Nov 20 2013

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ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Nielander, A. C., Bierman, M. J., Petrone, N., Strandwitz, N. C., Ardo, S., Yang, F., Hone, J., & Lewis, N. S. (2013). Photoelectrochemical behavior of n-type Si(111) electrodes coated with a single layer of graphene. Journal of the American Chemical Society, 135(46), 17246-17249. https://doi.org/10.1021/ja407462g